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  • MIL-PRF-19500-547 Revision D:2011

    Current The latest, up-to-date edition.

    Transistor, Field Effect, N-Channel, Silicon, Power, Low-Threshold Logic Level, High Frequency, High Switching Speed, Device Types 2N6660 and 2N6661, Through Hole and Surface Mount Packages, Quality Levels JAN, JANTX, JANTXV,and JANS

    Available format(s):  PDF

    Language(s): 

    Published date:  29-08-2011

    Publisher:  US Military Specs/Standards/Handbooks

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    Table of Contents - (Show below) - (Hide below)

    1. SCOPE
    2. APPLICABLE DOCUMENTS
    3. REQUIREMENTS
    4. VERIFICATION
    5. PACKAGING
    6. NOTES

    Abstract - (Show below) - (Hide below)

    Describes the performance requirements for a N-channel, enhancement-mode, lowthreshold logic level, high frequency, high switching speed MOSFET, power transistor.

    Scope - (Show below) - (Hide below)

    This specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level, high frequency, high switching speed MOSFET, power transistor. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500.

    General Product Information - (Show below) - (Hide below)

    Development Note Supersedes MIL S 19500/547. (02/2000) D NOTICE 1 - Notice of Validation. (07/2016)
    Document Type Standard
    Publisher US Military Specs/Standards/Handbooks
    Status Current
    Supersedes

    Standards Referencing This Book - (Show below) - (Hide below)

    MIL-PRF-19500 Revision P:2010 SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
    MIL-STD-750 Revision F:2011 TEST METHODS FOR SEMICONDUCTOR DEVICES
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