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  • MIL-PRF-19500-765 Revision B:2016

    Current The latest, up-to-date edition.

    Semiconductor Device, Diode, Silicon, Dual Schottky, Common Cathode, Encapsulated (Through-Hole and Surface Mount), Type 1N7072 and 1N7078 Quality Levels JAN, JANTX, JANTXV, and JANS

    Available format(s):  PDF

    Language(s):  English

    Published date:  14-03-2016

    Publisher:  US Military Specs/Standards/Handbooks

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    Table of Contents - (Show below) - (Hide below)

    1. SCOPE
    2. APPLICABLE DOCUMENTS
    3. REQUIREMENTS
    4. VERIFICATION
    5. PACKAGING
    6. NOTES

    Abstract - (Show below) - (Hide below)

    Describes the performance requirements for a silicon, dual Schottky, center-tap power rectifier diode for use in high frequency switching power supplies and resonant power converters.

    Scope - (Show below) - (Hide below)

    This specification covers the performance requirements for a silicon, dual Schottky, center-tap, power
    rectifier diode for use in high frequency switching power supplies and resonant power converters. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device.

    General Product Information - (Show below) - (Hide below)

    Document Type Standard
    Publisher US Military Specs/Standards/Handbooks
    Status Current

    Standards Referencing This Book - (Show below) - (Hide below)

    MIL-PRF-19500 Revision P:2010 SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
    MIL-STD-750 Revision F:2011 TEST METHODS FOR SEMICONDUCTOR DEVICES
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