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SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THRU 1N6666 AND 1N6664 THRU 1N6666R JAN, JANTX, JANTXV AND JANS
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Superseded date: 03-07-1998
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Published date: 12-01-2013
Publisher: US Military Specs/Standards/Handbooks
Covers the detail requirements for a silicon, fast recovery power rectifier diodes. Provides three levels of product assurance for each type of device.
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