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  • IEC 62373-1:2020

    Current The latest, up-to-date edition.

    Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

    Available format(s):  Hardcopy, PDF, PDF 3 Users, PDF 5 Users, PDF 9 Users

    Language(s):  English - French

    Published date:  15-07-2020

    Publisher:  International Electrotechnical Committee

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    Abstract - (Show below) - (Hide below)

    IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
    This document also defines the terms pertaining to the conventional BTI test method.

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    Committee TC 47
    Document Type Standard
    Publisher International Electrotechnical Committee
    Status Current
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