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  • IEC 62418:2010

    Current The latest, up-to-date edition.

    Semiconductor devices - Metallization stress void test

    Available format(s):  Hardcopy, PDF, PDF 3 Users, PDF 5 Users, PDF 9 Users

    Language(s):  English - French

    Published date:  22-04-2010

    Publisher:  International Electrotechnical Committee

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    Table of Contents - (Show below) - (Hide below)

    FOREWORD
    1 Scope
    2 Test equipment
    3 Test structure
    4 Stress temperature
    5 Procedure
    6 Failure criteria
    7 Data interpretation and lifetime extrapolation (resistance
      change method)
    8 Items to be specified and reported
    Annex A (informative) - Stress migration mechanism
    Annex B (informative) - Technology-dependent factors for
                            aluminium
    Annex C (informative) - Technology-dependent factors for
                            copper
    Annex D (informative) - Precautions
    Bibliography

    Abstract - (Show below) - (Hide below)

    IEC 62418:2010 describes a method of metallization stress void test and associated criteria. It is applicable to aluminium (Al) or copper (Cu) metallization.

    General Product Information - (Show below) - (Hide below)

    Committee TC 47
    Development Note Stability Date: 2020. (12/2017)
    Document Type Standard
    Publisher International Electrotechnical Committee
    Status Current

    Standards Referenced By This Book - (Show below) - (Hide below)

    IEC TS 62686-1:2015 Process management for avionics - Electronic components for aerospace, defence and high performance (ADHP) applications - Part 1: General requirements for high reliability integrated circuits and discrete semiconductors
    PD IEC/TS 62686-1:2015 Process management for avionics. Electronic components for aerospace, defence and high performance (ADHP) applications General requirements for high reliability integrated circuits and discrete semiconductors
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