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  • MIL-PRF-19500 Revision P:2010

    Superseded A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

    SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR

    Available format(s):  PDF

    Superseded date:  14-05-2021

    Language(s): 

    Published date: 

    Publisher:  US Military Specs/Standards/Handbooks

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    Table of Contents - (Show below) - (Hide below)

    1. SCOPE
    2. APPLICABLE DOCUMENTS
    3. REQUIREMENTS
    4. VERIFICATION
    5. PACKAGING
    6. NOTES
    APPENDIX A - DEFINITIONS
    APPENDIX B - ABBREVIATIONS AND SYMBOLS
    APPENDIX C - QUALITY MANAGEMENT PROGRAM
    APPENDIX D - QUALITY SYSTEM
    APPENDIX E - STANDARD VERIFICATION SYSTEM FOR
                 QUALIFIED PRODUCTS
    APPENDIX G - DISCRETE SEMICONDUCTOR DIE/CHIP LOT
                 ACCEPTANCE
    APPENDIX H - CRITICAL INTERFACE AND MATERIALS

    Abstract - (Show below) - (Hide below)

    Determines the general performance requirements for semiconductor devices. Product assurance is provided by effective screening, conformance inspection, and process controls to mitigate risk. Mission assurance and standardization of parts are the highest priorities.

    General Product Information - (Show below) - (Hide below)

    Committee FSC 5961
    Document Type Standard
    Publisher US Military Specs/Standards/Handbooks
    Status Superseded
    Supersedes

    Standards Referenced By This Book - (Show below) - (Hide below)

    MIL-PRF-19500-313 Revision K:2016 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW POWER, TYPES 2N2432, 2N2432A, 2N2432UB, 2N2432AUB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
    MIL-PRF-19500-426 Revision J:2016 TRANSISTOR, PNP, SILICON, AMPLIFIER TYPE 2N4957, JAN, JANTX, JANTXV, JANS, JANHC, JANKC
    DD IEC TS 62396-1 : DRAFT JUL 2006 PROCESS MANAGEMENT FOR AVIONICS - ATMOSPHERIC RADIATION EFFECTS - PART 1: ACCOMMODATION OF ATMOSPHERIC RADIATION EFFECTS VIA SINGLE EVENT EFFECTS WITHIN AVIONICS ELECTRONIC EQUIPMENT
    MIL-PRF-19500-676 Revision F:2014 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES, JANTXVR AND JANSR
    MIL-PRF-19500-741 Revision A:2009 TRANSISTOR, DIE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
    18/30373170 DC : 0 BS EN 62668-2 - PROCESS MANAGEMENT FOR AVIONICS - COUNTERFEIT PREVENTION - PART 2: MANAGING ELECTRONIC COMPONENTS FROM NON-FRANCHISED SOURCES
    MIL-STD-1580 Revision B:2003 DESTRUCTIVE PHYSICAL ANALYSIS FOR ELECTRONIC, ELECTROMAGNETIC, AND ELECTROMECHANICAL PARTS
    MIL-PRF-19500-645 Revision D:2013 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6772, 1N6773, 1N6772R and 1N6773R JAN, JANTX, JANTXV, and JANS
    IEC 62396-1:2016 Process management for avionics - Atmospheric radiation effects - Part 1: Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment
    MIL-PRF-19500-6 Revision C:1999 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER, TYPES 2N43AZ1, 2N43AZ2, 2N44AZ1 AND 2N44AZ2
    MIL-PRF-19500-754 Revision A:2015 Semiconductor Device, Diode, Silicon, Schottky, Dual Diode, Common Cathode, Device Type 1N7064, Surface Mount Package, Quality Levels JAN, JANTX, JANTXV, and JANS
    MIL-PRF-19500-366 Revision R:2015 Transistor, NPN, Radiation Hardened, Silicon, Amplifier, Types 2N3498, 2N3499, 2N3500, 2N3501, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
    MIL-PRF-19500-610 Revision F:2014 SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N6677-1 AND 1N6677UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
    MIL-DTL-32529 Base Document:2015 POWER ELECTRONIC CONVERSION EQUIPMENT, NAVAL SHIPBOARD
    MIL-PRF-19500-661 Revision F:2017 TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND 2N7392, JANTXVR AND JANSR
    01/206130 DC : DRAFT AUG 2001 IEC 62258 - SEMICONDUCTOR DIE PRODUCTS - MINIMUM REQUIREMENTS FOR PROCUREMENT AND USE - PART 1: GENERAL REQUIREMENTS - MECHANICAL, MATERIAL AND CONNECTIVITY
    MIL-PRF-83383 Revision F:2017 Circuit Breakers, Remote Control, Thermal, Trip Free General Specification For
    MIL-PRF-19500-427 Revision P:2013 SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
    MIL-PRF-19500-756 Revision A:2014 Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Through Hole and Surface Mount, Types 2N7606 and 2N7607 Quality Levels JANTXV and JANS
    MIL-PRF-19500-231 Revision R:2015 Semiconductor Device, Diode, Switching, Silicon, Types 1N4150and 1N3600, Quality Levels JAN, JANTX, JANTXV, JANHCand JANKC
    MIL-PRF-19500-158 Revision T:2009 SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N3154-1, THROUGH 1N3157-1, AND 1N3154UR-1 THROUGH 1N3157UR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, H
    MIL-PRF-19500-563 Revision G:2012 Transistor, Field Effect, P-Channel, Silicon, Types 2N6845 and 2N6847,JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
    MIL-PRF-19500-542 Revision K:2017 TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
    MIL-PRF-19500-488 Revision E:2008 Transistor, NPN, Silicon, High-Power, Types 2N5671 and 2N5672, Case Mount Through Hole, Quality Levels JAN, JANTX, JANTXV, and JANS
    MIL-PRF-19500-582 Revision C:2015 Transistor, PNP, Silicon Amplifier, Types 2N5679and 2N5680, JAN, JANTX, JANTXV, JANHCand JANKC
    MIL-PRF-19500-706 Revision C:2015 TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7497T2, 2N7498T2, 2N7499T2, AND 2N7561T2 JANTXVR AND JANSR
    MIL-PRF-19500-411 Revision T:2016 Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Encapsulated (Through-Hole and Surface Mount Packages), and Un-Encapsulated, Device Types 1N5415 Through 1N5420, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC and JANKC
    MIL-STD-750-3 Base Document:2012 Transistor Electrical Test Methods for Semiconductor Devices Part 3: Test Methods 3000 Through 3999
    MIL-PRF-19500-368 Revision M:2013 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES: 2N3439, 2N3439L, 2N3439UA, 2N3439U4, 2N3440, 2N3440L, 2N3440UA, AND 2N3440U4, JAN, JANTX, JANTXV, JANS, JANHCB, JANKCB, JANHCC, JANKCC JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH
    MIL-PRF-19500-604 Revision B:2004 Transistor, Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7272, 2N7275, 2N7278,and 2N7281, JANTXV, andJANS (No S/S Document)
    MIL-PRF-19500-181 Revision J:2011 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER, TYPES 2N718A, 2N1613, AND 2N1613L, JAN, JANTX, AND JANTXV
    MIL-PRF-19500-162 Revision E:2014 SEMICONDUCTOR DEVICES, DIODE, SILICON, POWER RECTIFIER, TYPES 1N1614, 1N1615, 1N1616, 1N4458, 1N4459, 1N1614R, 1N1615R, 1N1616R, 1N4458R, 1N4459R, JAN AND JANTX
    MIL-PRF-19500-403 Revision A:2016 SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, AXIAL LEADED PACKAGE, TYPE 1N4500, QUALITY LEVELS JAN AND JANTX
    MIL-PRF-19500-631 Revision B:2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7395, 2N7396, 2N7397, AND 2N7398, JANSD AND JANSR
    MIL-PRF-19500-702 Revision E:2016 TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7482, 2N7483, AND 2N7484, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
    EIA 557 : 2006 STATISTICAL PROCESS CONTROL SYSTEMS
    MIL-PRF-19500-641 Base Document:1997 SEMICONDUCTOR DEVICE, DIODE, GALLIUM ARSENIDE, POWER RECTIFIER, TYPE 1N6757 JANTX, JANTXV AND JANS
    MIL-PRF-19500-629 Revision C:2004 SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N6702 AND 1N6702US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
    MIL-PRF-19500-639 Revision A:1998 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7411 JANSD AND JANSR
    MIL-STD-750 Revision F:2011 TEST METHODS FOR SEMICONDUCTOR DEVICES
    MIL-PRF-19500-355 Revision V:2016 Transistor, Unitized Dual, NPN, Silicon, Types 2N2919, 2N2920, JAN, JANTX, JANTXV, JANS, JANHC and JANKC
    MIL-PRF-19500-765 Revision B:2016 Semiconductor Device, Diode, Silicon, Dual Schottky, Common Cathode, Encapsulated (Through-Hole and Surface Mount), Type 1N7072 and 1N7078 Quality Levels JAN, JANTX, JANTXV, and JANS
    MIL-PRF-19500-478 Revision L:2017 DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, TYPES 1N5812, 1N5814, 1N5816, AND R VERSIONS, JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS
    MIL-PRF-19500-577 Revision D:2016 SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE, AXIAL LEAD, TYPES 1N6528 THROUGH 1N6535, JAN, JANTX, JANTXV, AND JANS
    MIL-PRF-19500-270 Revision K:2016 TRANSISTOR, UNITIZED, DUAL, NPN, SILICON THROUGH HOLE MOUNT PACKAGE, TYPE 2N2060 QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
    MIL-PRF-19500-476 Revision F:2013 Transistor, Field Effect, P-Channel, Silicon, Types 2N5114 Through 2N5116, JAN, JANTX, and JANTXV
    MIL-PRF-19500-500 Revision F:2017 Semiconductor Device, Diode, Silicon, Unipolar Transient Voltage Suppressor, Types 1N5555 Through 1N5558, 1N5907, 1N5629 Through 1N5665, JAN, JANTX, and JANTXV
    MIL-PRF-19500-570 Revision F:2015 TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON LOGIC-LEVEL, TYPES 2N6901 AND 2N6903, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
    MIL-PRF-19500-621 Revision D:2014 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER, TYPE 2N7369, JAN, JANTX, JANTXV, AND JANS
    MIL-PRF-19500-759 Revision A:2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) DUAL TRANSISTOR, N-CHANNEL AND P-CHANNEL, LOGIC-LEVEL SILICON TYPES 2N7632UD, JANTXVR, F, AND JANSR, F
    MIL-PRF-19500-761 Revision A:2015 Semiconductor Device, Diode, Silicon, Schottky, Type 1N7069, Quality Levels JAN, JANTX, JANTXV, and JANS
    MIL-PRF-19500-454 Revision J:2012 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N5660, 2N5660U3, 2N5661, 2N5661U3, 2N5662, AND 2N5663, JAN, JANTX, AND JANTXV
    MIL-PRF-19500-448 Revision F:2013 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER, TYPE 2N4405, 2N4405UA, AND 2N4405UB, JAN AND JANTX
    MIL-PRF-19500-485 Revision N:2013 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA, AND 2N5416U4, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANHCD, JANKCB, JANKCD, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH
    MIL-PRF-19500-575 Revision F:2016 Semiconductor Device, Diode, Silicon, High Voltage Power Rectifier, Fast Recovery, Axial Leaded and Surface Mount, Types 1N6512 Through 1N6519, Quality Levels JAN, JANTX, JANTXV, and JANS
    MIL-DTL-19491 Revision J:2014 SEMICONDUCTOR DEVICES, PACKAGING OF
    I.S. EN 62258-1:2010 SEMICONDUCTOR DIE PRODUCTS - PART 1: PROCUREMENT AND USE
    MIL-STD-883 Revision K:2016 TEST METHOD STANDARD - MICROCIRCUITS
    EN 62258-1:2010 Semiconductor die products - Part 1: Procurement and use
    DSCC 6209D:2023 MICROCIRCUIT, HYBRID, LINEAR, 3.3 VOLT, SINGLE CHANNEL, DC-DC CONVERTER
    MIL-DTL-7788 Revision H:2011 PANELS, INFORMATION, INTEGRALLY ILLUMINATED
    MIL-DTL-917 Revision F:2014 ELECTRIC POWER EQUIPMENT, BASIC REQUIREMENTS FOR
    MIL STD 750-2 : A MECHANICAL TEST METHODS FOR SEMICONDUCTOR DEVICES - PART 2: TEST METHODS 2001 THROUGH 2999
    MIL STD 11991 : A GENERAL STANDARD FOR PARTS, MATERIALS, AND PROCESSES
    DSCC 99003 : B SEMICONDUCTOR DEVICE, THYRISTOR, REVERSE BLOCKING, SILICON, TYPES 2N1792 AND 2N1910 FAMILIES
    MIL-DTL-16556 Revision F:2017 Valve, Solenoid, Three-Way Bypass ( Naval Shipboard Use )
    MIL-PRF-19500-508 Revision E:2016 TRANSISTOR, PNP, SILICON, POWER, ENCAPSULATED (THROUGH-HOLE MOUNT PACKAGE), TYPES 2N6437 AND 2N6438, JAN, JANTX, AND JANTXV
    15/30324422 DC : 0 BS EN 62396-1 - PROCESS MANAGEMENT FOR AVIONICS - ATMOSPHERIC RADIATION EFFECTS - PART 1: ACCOMMODATION OF ATMOSPHERIC RADIATION EFFECTS VIA SINGLE EVENT EFFECTS WITHIN AVIONICS ELECTRONIC EQUIPMENT
    MIL-PRF-19500-379 Revision K:2015 Transistor, PNP, Silicon, High-Power, Encapsulated (Through Hole), Device Types 2N3791 and 2N3792, Quality Levels: JAN, JANTX, JANTXV, and JANS
    MIL-PRF-19500-671 Revision A:2012 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY POWER RECTIFIER, COMMON CATHODE OR ANODE CENTER TAP, TYPES 1N6828, 1N6828R, 1N6833, 1N6833R, 1N6828U3, AND 1N6833U3, JAN, JANTX, JANTXV, AND JANS
    MIL-PRF-19500-562 Revision E:2010 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6804 AND 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
    MIL-PRF-19500-599 Revision E:2014 Transistor, Quad, Field Effect, P-Channel, Silicon, 14-Pin Dual Inline Package, Type 2N7335, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
    MIL-PRF-19500-114 Revision J:2016 SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, CASE MOUNT THROUGH HOLE PACKAGE, STANDARD AND REVERSE POLARITY, TYPES 1N2804 THROUGH 1N2811, 1N2813, 1N2814, 1N2816,1N2818 THROUGH 1N2820, 1N2822 THROUGH 1N2827, 1N2829, 1N2831 THROUGH 1N2838, 1N2840 THROUGH 1N2846, AND 1N4557 THROUGH 1N4562, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
    MIL-PRF-19500-664 Revision F:2017 TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
    MIL-PRF-19500-602 Revision B:1997 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7265, 2N7266, AND 2N7267 JANTXVM, D,R,F,G, AND H AND JANSM, D,R,F,G, AND H
    MIL-PRF-19500-659 Revision A:2014 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON TYPE 2N7440, AND 2N7441 JANSD AND JANSR
    MIL-PRF-19500-177 Revision H:2010 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON LOW-POWER TYPES 2N1131, 2N1131L, 2N1132, 2N1132L, JAN, JANTX, AND JANTXV
    MIL-PRF-19500-297 Revision J:2014 SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N1184, 1N1186, 1N1188, 1N1190, 1N3766, 1N3768, 1N1184R, 1N1186R, 1N1188R, 1N1190R, 1N3766R, 1N3768R, JAN, JANTX, AND JANTXV
    MIL-PRF-19500-721 Revision C:2013 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6892UTK1, 1N6893UTK1, 1N6894UTK1, 1N6895UTK1, 1N6892UTK1CS, 1N6893UTK1CS, 1N6894UTK1CS, 1N6895UTK1CS, 1N6892UTK1AS, 1N6893UTK1AS, 1N6894UTK1AS, AND 1N6895UTK1AS JANTX, JANTXV, AND JANS
    MIL-PRF-19500-540 Revision G:2015 TRANSISTOR, DARLINGTON, PNP SILICON, POWER, DEVICE TYPES 2N6298 AND 2N6299, JAN, JANTX, AND JANTXV
    MIL-PRF-19500-516 Revision G:2016 Semiconductor Device, Diode, Silicon, Bipolar Transient Voltage Suppressor, Encapsulated (Through-Hole and Surface Mount Packages) and Un-Encapsulated Types 1N6102 Through 1N6173, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
    MIL-PRF-19500-642 Revision D:2007 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Case Mount Through Hole Package, Standard and Reverse Polarity, Types 1N6762 Through 1N6765, Quality LevelsJAN, JANTX, JANTXV, and JANS
    MIL-PRF-19500-392 Revision K:2017 TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N3485 AND 2N3486, JAN, JANTX, AND JANTXV
    MIL-PRF-19500-472 Revision F:2012 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON, TYPES 2N6350, 2N6351, 2N6352, AND 2N6353, JAN, JANTX, JANTXV, AND JANHC
    MIL-PRF-19500-678 Revision C:2015 RECTIFIER, SEMICONDUCTOR DEVICE, SILICON, DUAL SCHOTTKY CENTER TAP, FOR POWER APPLICATIONS, SURFACE MOUNT, TYPES 1N6840 AND 1N6841, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
    MIL-PRF-19500-523 Revision D:2012 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON TYPES 2N6383, 2N6384, 2N6385, JAN, JANTX, AND JANTXV
    MIL-PRF-19500-662 Revision F:2013 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F
    MIL-PRF-19500-589 Revision A:1998 SEMICONDUCTOR DEVICE, TRANSISTOR, INSULATED GATE, BIPOLAR N-CHANNEL, SILICON TYPES 2N7367 AND 2N7368 JAN, JANTX, JANTXV AND JANS
    MIL-PRF-19500-394 Revision P:2015 TRANSISTOR, NPN, SILICON, POWER SWITCHING, TYPES: 2N4150, 2N5237, 2N5238, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
    MIL PRF 19500/421 : J TRANSISTOR, DUAL, UNITIZED, NPN/PNP, COMPLEMENTARY, SILICON, TYPES 2N3838, 2N4854, AND 2N4854U, JAN, JANTX, AND JANTXV
    MIL-PRF-19500-573 Revision C:2012 Semiconductor Device, Transistor, PNP, Silicon, Switching Types 2N4209, JAN, JANTX, JANTXV, JANTXVM, JANTXVD, JANTXVP, JANTXVL, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHC, JANHCM, JANHCD, JANHCP, JANHCL, JANHCR, JANHCF, JANHCG, JANHCH, JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, and JANKCH (...
    MIL-PRF-19500-291 Revision W:2016 Transistor, PNP, Silicon, Switching, Device Types 2N2906A and2N2907A, Encapsulated (Through Holeand Surface Mount Packages)and Unencapsulated, Radiation Hardness Assurance, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, andJANKC
    MIL-PRF-19500-668 Base Document:1999 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7462U1 JANSD, -R
    MIL-PRF-19500-675 Revision F:2018 TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON TYPES 2N7463, 2N7464, JANTXVR AND JANSR
    MIL-PRF-19500-406 Revision M:2015 RECTIFIER, SEMICONDUCTOR DEVICE, SILICON, VOLTAGE REGULATOR, ENCAPSULATED THROUGH-HOLE AND SURFACE MOUNT PACKAGES, DEVICE TYPES 1N4460 THROUGH 1N4496, AND 1N6485 THROUGH 1N6491, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
    BS IEC 62396-1 : 2016 PROCESS MANAGEMENT FOR AVIONICS - ATMOSPHERIC RADIATION EFFECTS - PART 1: ACCOMMODATION OF ATMOSPHERIC RADIATION EFFECTS VIA SINGLE EVENT EFFECTS WITHIN AVIONICS ELECTRONIC EQUIPMENT
    MIL-PRF-19500-646 Revision E:2008 Semiconductor Device, Diode, Silicon, Power Rectifier, Ultrafast, Types 1N6774 Through 1N6777, JAN, JANTX, JANTXV, and JANS
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    MIL-PRF-19500-317 Revision T:2015 TRANSISTOR, NPN, SILICON, SWITCHING, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT), AND UNENCAPSULATED, RADIATION HARDNESS ASSURANCE, TYPES 2N2369A, 2N3227, 2N4449, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, JANKC
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    MIL PRF 19500/255 : 200AA TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N2221, 2N2222, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
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    DSCC 01037 : B SEMICONDUCTOR DEVICE, DIODE, SILICON, MIXER, 1N23WE, 1N23WEM, 1N23WEMR 1N23WG, 1N23WGM, AND 1N23WGMR
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    ISO 20188:2018 Space systems — Product assurance requirements for commercial satellites
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    17/30365636 DC : 0 BS EN 62239-1 ED.1.0 - PROCESS MANAGEMENT FOR AVIONICS - MANAGEMENT PLAN - PART 1: PREPARATION AND MAINTENANCE OF AN ELECTRONIC COMPONENTS MANAGEMENT PLAN
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    PD IEC/TS 62668-2:2016 Process management for avionics. Counterfeit prevention Managing electronic components from non-franchised sources
    PD IEC/TS 62686-1:2015 Process management for avionics. Electronic components for aerospace, defence and high performance (ADHP) applications General requirements for high reliability integrated circuits and discrete semiconductors
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    MIL-PRF-19500-606 Revision B:2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7291, 2N7293, 2N7295, AND 2N7297, JANTXVM, D, AND R, AND JANSM, D, AND R
    MIL-PRF-19500-159 Revision P:2009 SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F
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    MIL-PRF-19500-198 Revision F:2014 SEMICONDUCTOR DEVICE, THYRISTORS, TYPES 2N1870A, 2N1871A, 2N1872A, AND 2N1874A, JAN
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    MIL-PRF-19500-354 Revision N:2017 TRANSISTOR, PNP, SILICON, LOW-POWER, TYPES 2N2604, 2N2605, JAN, JANTX, JANTXV, AND JANS, JANHC, AND JANKC
    MIL-PRF-19500-748 Revision B:2017 TRANSISTOR, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7505, JANTX, JANTXV AND JANS
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    MIL-PRF-19500-717 Base Document:2005 SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036AUEG THROUGH 1N6072AUEG, 1N6036AUEJ THROUGH 1N6072AUEJ, JAN, JANTX, AND JANTXV
    MIL-PRF-19500-624 Revision E:2012 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON TYPES 2N7370, JAN, JANTX, JANTXV, AND JANS
    MIL-PRF-19500-557 Revision M:2017 TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6796, 2N6798, 2N6800, AND 2N6802 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
    MIL-PRF-19500-423 Revision H:2017 TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N5581 AND 2N5582, JAN, JANTX, AND JANTXV
    MIL-PRF-19500-750 Revision A:2014 TRANSISTOR, FIELD EFFECT N-CHANNEL, SILICON, SURFACE MOUNT PACKAGE, TYPE 2N7507 QUALITY LEVELS JANTX, JANTXV AND JANS
    MIL-PRF-19500-587 Revision E:2014 Semiconductor Device, Diode, Silicon, Rectifier, Device Types 1N6661, 1N6662, and 1N6663, (Through Hole and Surface Mount Packages) Quality Levels JAN, JANTX, JANTXV, and JANS
    MIL-PRF-19500-607 Revision B:2004 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL AND P-CHANNEL, SILICON, TYPE 2N7337 JAN, JANTX, JANTXV, JANS, AND JANHC
    MIL-PRF-19500-357 Revision N:2015 TRANSISTOR, PNP, RADIATION HARDENED, SILICON, AMPLIFIER, TYPES 2N3634 THROUGH 2N3637, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
    MIL-PRF-19500-429 Revision N:2014 SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
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    MIL-PRF-19500-495 Revision H:2015 SEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, NPN, SILICON TYPES 2N5793, 2N5794, JAN, JANTX, JANTXV, JANS
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    MIL-PRF-19500-576 Revision E:2016 SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER, FAST RECOVERY, TYPES 1N6520 THROUGH 1N6527, JAN, JANTX, JANTXV, AND JANS
    MIL-PRF-19500-766 Revision B:2016 TRANSISTOR, PNP, SILICON, LOW-POWER, TYPE 2N5401, JANS, JANSR, JAN, JANTX, AND JANTXV
    MIL-PRF-19500-510 Revision J:2013 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N6249, 2N6249T1, 2N6249T3, 2N6250, 2N6250T1, 2N6250T3, 2N6251, 2N6251T1, 2N6251T3, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANKCB, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH
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    MIL-PRF-19500-144 Revision T:2016 Semiconductor Device, Diode, Silicon, Switching, Types 1N4454-1, 1N4454UR-1, 1N4454UB, 1N4454UBCA, 1N4454UBCC, 1N4454UBD, 1N3064, 1N4532, JAN, JANTX, JANTXV, JANHC, and JANKC
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    DD IEC/TS 62239:2003 Process management for avionics. Preparation of an electronic components management plan
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    MIL-PRF-19500-683 Revision F:2016 TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPE 2N7467, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
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    MIL-PRF-55310 Revision E:2006 OSCILLATOR, CRYSTAL CONTROLLED, GENERAL SPECIFICATION FOR
    MIL-PRF-19500-443 Revision B:1999 SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE 1N5719 JAN, JANTX, AND JANTXV
    MIL-PRF-19500-290 Revision P:2011 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES, 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, AND 2N2905AL, JAN, JANTX, JANTXV, JANS, JANTXVM, JANTXVD, JANTXVP, JANTXVL, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, AND JANSH
    MIL-PRF-19500-696 Revision B:2017 TRANSISTOR, FIELD EFFECT, PLASTIC, N-CHANNEL, SILICON, TYPE 2N7537, 2N7537A, 2N7552, 2N7553, 2N7554, JAN AND JANTX
    MIL-PRF-19500-445 Revision D:1999 SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N5712, 1N5712-1, AND 1N5712UR-1 JAN, JANTX, JANTXV, JANJ, JANS, JANHC AND JANKC
    MIL-PRF-19500-612 Revision F:2016 TRANSISTOR, PNP, SILICON, POWER, THROUGH HOLE, TYPE 2N7372, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
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    MIL-PRF-19500-347 Revision B:2014 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES: 2N3253, 2N3253S, 2N3444, 2N3444S, JAN AND JANTX
    MIL-PRF-19500-337 Revision L:2013 SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N4153-1, 1N4153UR-1, 1N4153UB, 1N4153UBCA, 1N4153UBCC, 1N4153UBD, 1N4153UBN, 1N4153UBND, 1N4534, AND 1N4534UB, JAN, JANTX, JANTXV, JANHC, AND JANKC
    MIL-PRF-19500-157 Revision T:2009 SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND 1N946BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H
    MIL-PRF-19500-251 Revision T:2015 TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N2218, AND 2N2219, JAN, JANTX, JANTXV, AND JANS
    MIL-PRF-19500-439 Revision H:2014 Transistor, NPN, Silicon, High-Power, Types 2N5038and 2N5039, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
    MIL-PRF-19500-415 Revision C:2016 TRANSISTOR, NPN, SILICON, HIGH POWER, STUD MOUNT CASE, TYPES 2N2812 AND 2N2814, QUALITY LEVELS JAN, JANTX, AND JANTXV
    MIL-PRF-19500-600 Revision B:1997 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7229 AND 2N7230 JANTX, JANTXV, JANS, JANHC, AND JANKC
    MIL-PRF-19500-374 Revision F:2014 TRANSISTOR, NPN, SILICON, POWER, TYPES 2N3996 THROUGH 2N3999, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
    MIL-PRF-19500-580 Revision D:2015 TRANSISTOR, PNP, SILICON AMPLIFIER, TYPES 2N4234, 2N4235, AND 2N4236, JAN, JANTX, AND JANTXV
    MIL-PRF-19500-647 Revision E:2013 SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6778 AND 1N6779, JAN, JANTX, JANTXV, AND JANS
    MIL-PRF-19500-611 Revision A:1997 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING TYPES 2N7374, 2N7375, 2N7376, AND 2N7377, JANTX, JANTXV, AND JANS
    MIL-PRF-19500-586 Revision M:2017 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, ENCAPSULATED (AXIAL LEADED AND SURFACE MOUNT) AND UNENCAPSULATED, TYPES 1N5817-1, 1N5819-1, AND 1N6761-1, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
    MIL-PRF-19500-757 Revision C:2014 TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, THROUGH HOLE AND SURFACE MOUNT, TYPES 2N7624 AND 2N7625 QUALITY LEVELS JANTXV AND JANS
    MIL-PRF-19500-295 Revision F:2012 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB
    MIL-PRF-19500-117 Revision R:2008 SEMICONDUCTOR DEVICES, SILICON, VOLTAGE REGULATOR, TYPES 1N962B-1 THROUGH 1N992B-1, AND 1N962BUR-1 THROUGH 1N992BUR-1, 1N962C-1 THROUGH 1N992C-1, AND 1N962CUR-1 THROUGH 1N992CUR-1, AND 1N962D-1 THROUGH 1N992D-1, 1N962DUR-1 THROUGH 1N992DUR-1, JAN, JANTX, JANTXV, JANHC, AND JANKC
    MIL-PRF-19500-369 Revision J:2015 TRANSISTOR, NPN, SILICON, POWER, TYPE 2N3441, JAN, JANTX, AND JANTXV
    MIL-PRF-19500-552 Revision H:2016 Semiconductor Device, Diode, Silicon, Unipolar Transient Voltage Suppressor, Types 1N6469 Through 1N6476, Through-Hole and Surface Mount Packages, Quality Levels JAN, JANTX, and JANTXV
    MIL-PRF-19500-672 Base Document:2001 SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, TYPE 2N2222AUE1 JAN, JANTX, JANJ
    MIL-PRF-19500-522 Revision B:2017 Transistor, NPN, Silicon, High Frequency Types 2N6603 and 2N6604, JAN, JANTX, and JANTXV
    MIL-PRF-19500-514 Revision D:2013 TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6274 AND 2N6277, JAN, JANTX, AND JANTXV
    MIL-PRF-19500-375 Revision K:2017 TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3822, AND 2N3823, JAN, JANTX, JANTXV, AND JANS
    MIL-PRF-19500-635 Revision A:2000 SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6710 THROUGH 1N6716 AND 1N6710R THROUGH 1N6716R JANTX, JANTXV, AND JANS AND POWER RECTIFIER, STANDARD RECOVERY, TYPES 1N6710B THROUGH 1N6716B AND 1N6710BR THROUGH 1N6716BR, JANTX, JANTXV AND JANS
    MIL-PRF-19500-762 Revision A:2015 SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY, COMMON CATHODE, TYPE 1N7062CCT1, JAN, JANTX, JANTXV, AND JANS
    MIL-PRF-19500-343 Revision M:2016 RF Transistor, NPN, Silicon, Low Power, Encapsulated (Through-Hole and Surface Mount), and Unencapsulated, Radiation Hardness Assurance, Types 2N2857, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
    MIL-PRF-19500-336 Revision N:2016 Transistor, Dual, Unitized, PNP, Radiation Hardened, Silicon, Types 2N3810, and 2N3811, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
    MIL-PRF-19500-420 Revision N:2016 SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES), TYPES 1N5550 THROUGH 1N5554, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
    MIL-PRF-19500-535 Revision F:2016 TRANSISTOR, PNP, SILICON, POWER, THROUGH HOLE, TYPES 2N5003 AND 2N5005, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
    MIL-PRF-19500-464 Revision H:2015 TRANSISTOR, NPN, SILICON, POWER, DEVICE TYPES 2N5685 AND 2N5686, JAN, JANTX, AND JANTXV
    MIL-PRF-19500-725 Revision C:2011 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6930UTK1, 1N6931UTK1, 1N6932UTK1, 1N6930UTK1CS, 1N6931UTK1CS, 1N6932UTK1CS, 1N6930UTK1AS, 1N6931UTK1AS, AND 1N6932UTK1AS, JANTX, JANTXV, AND JANS
    MIL-PRF-19500-763 Revision A:2015 Semiconductor Device, Diode, Silicon, Schottky, Dual, Common Cathode, Encapsulated (Through-Hole), Type 1N7070, Quality Levels JAN, JANTX, JANTXV, and JANS
    MIL-PRF-19500-726 Revision E:2017 Semiconductor Device, Diode, Silicon, Schottky Rectifier, Types 1N6940, 1N6941, 1N6942 JANTX, JANTXV, and JANS
    MIL-PRF-19500-585 Revision L:2017 DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER, AXIAL LEAD THROUGH-HOLE AND SURFACE MOUNT PACKAGES, 1N6620 THROUGH 1N6625, JAN, JANTX, JANTXV, AND JANS
    MIL-PRF-19500-747 Revision B:2013 Semiconductor Device, Field Effect Transistor, N-Channel, Radiation Hardened, Silicon, Type 2N7504T2, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSF, JANSG, JANSR, and JANSH (No S/S Document)
    DSCC 99009 : A SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5241
    MIL-PRF-19500-124 Revision M:2016 SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, CASE MOUNT STUD PACKAGE, STANDARD AND REVERSE POLARITY, TYPES 1N2970B THROUGH 1N2977B, 1N2979B, 1N2980B, 1N2982B, 1N2984B THROUGH 1N2986B, 1N2988B THROUGH 1N2993B, 1N2995B, 1N2997B, 1N2999B THROUGH 1N3005B, 1N3007B, 1N3008B, 1N3009B, 1N3011B, 1N3012B, 1N3014B, 1N3015B, 1N3993A THROUGH 1N3998A, QUALITY LEVELS JAN,
    MIL-PRF-19500-732 Revision E:2016 TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, THROUGH-HOLE AND SURFACE MOUNT, TYPES 2N7519 AND 2N7520, QUALITY LEVELS JANTXV AND JANS
    MIL-PRF-19500-583 Revision C:2015 Transistor, NPN, Silicon Amplifier, Types 2N5681and 2N5682, JAN, JANTX, JANTXV, JANHC, and JANKC
    MIL-PRF-19500-764 Revision A:2015 Semiconductor Device, Diode, Silicon, Schottky, Dual, Common Cathode, Encapsulated (Through-Hole), Type 1N7071, Quality Levels JAN, JANTX, JANTXV, and JANS
    MIL-PRF-19500-694 Revision B:2015 TRANSISTOR, NPN, PLASTIC, SILICON, SWITCHING, TYPE 2N3700UE1, JAN AND JANTX
    MIL-PRF-19500-674 Base Document:2001 SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, LOW NOISE TYPE 2N2484UE1 JAN, JANTX, JANJ
    MIL-PRF-19500-686 Base Document:2001 SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N2907AUE1 JAN, JANTX, JANJ
    MIL-PRF-19500-737 Revision A:2007 Semiconductor Device, Diode, Silicon, Schottky, Dual, Center Tap, Types 1N7039 and 1N7047,(Flange Mount and Surface Mount Packages) Quality Levels JANTX, JANTXV, and JANS
    MIL-PRF-19500-707 Revision C:2015 TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL, SILICON, TYPES 2N7500U5, 2N7501U5, AND 2N7502U5, JANTXVR AND JANSR
    MIL-PRF-19500-323 Revision P:2016 TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N3250A, 2N3251A, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
    DSCC 04029 : 2005 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5927
    MIL-PRF-19500-127 Revision W:2012 SEMICONDUCTOR DEVICES, SILICON, VOLTAGE REGULATOR, TYPES 1N4370A-1 THROUGH 1N4372A-1 AND 1N746A-1 THROUGH 1N759A-1, 1N4370AUR-1 THROUGH 1N4372AUR-1 AND 1N746AUR-1 THROUGH 1N759AUR-1, 1N4370C-1 THROUGH 1N4372C-1 AND 1N746C-1 THROUGH 1N759C-1, 1N4370CUR-1 THROUGH 1N4372CUR-1 AND 1N746CUR-1 THROUGH 1N759CUR-1, 1N4370D-1 THROUGH 1N4372D-1 AND 1N746D-1 THROUGH 1N759D-1, 1N4370DUR-1 THROU
    MIL-PRF-19500-241 Revision R:2015 Semiconductor Device, Diode, Silicon, Low Leakage, Controlled Forward Voltage, Types 1N3595, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
    MIL-PRF-19500-638 Revision B:2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPE 2N7410, JANSD AND JANSR
    MIL-PRF-19500-452 Revision J:2009 SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1 THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H, JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
    MIL-PRF-19500-745 Revision D:2012 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
    MIL-PRF-19500-312 Revision F:2015 TRANSISTOR, NPN, SILICON, SWITCHING, THROUGH-HOLE PACKAGE AND UNENCAPSULATED DIE, TYPE 2N708, QUALITY LEVELS JAN, JANTX, AND JANHC
    MIL-PRF-19500-695 Base Document:2001 SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N4033UE1 JAN, JANTX, JANJ
    MIL-PRF-19500-399 Revision G:2016 TRANSISTOR, NPN, SILICON, SWITCHING TYPE 2N3960 AND 2N3960UB JAN, JANTX, JANTXV, JANHC, JANKC
    MIL-PRF-19500-598 Revision C:2014 Transistor, Quad, Field Effect, P-Channel and N-Channel, Silicon, 14-Pin Dual Inline Package, Type 2N7336, Quality Levels JAN, JANTX, JANTXV, and JANS
    MIL-PRF-19500-663 Revision G:2017 TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
    MIL-PRF-19500-268 Revision D:2015 TRANSISTOR, NPN, SILICON, HIGH-SPEED SWITCHING THROUGH-HOLE MOUNT, TYPE 2N2481, QUALITY LEVELS JAN AND JANTX
    MIL-PRF-19500-592 Revision H:2017 TRANSISTOR, REPETITIVE AVALANCHE, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
    MIL-PRF-19500-398 Revision L:2015 Transistor, NPN, Silicon, High-Frequency, Encapsulated (Through-Hole and Surface Mount) and Uncapsulated, Radiation Hardness Assurance, Device Type 2N3866, Quality Levels: JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
    MIL-PRF-19500-566 Revision D:2018 Transistor, Field Effect, N-Channel, Silicon, Logic Level, Types 2N6902, and 2N6904 JAN, JANTX, JANTXV and JANS
    MIL-PRF-19500-424 Revision C:2014 SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, 1N5186, 1N5187, 1N5188, AND 1N5190, JAN, JANTX, AND JANTXV
    MIL-DTL-28875 Revision C:2012 Amplifiers, Radio-Frequency and Microwave, Solid-State, General Specification for
    MIL-DTL-62421 Revision A:2009 CONTROL, UNIT, ELECTRONIC, DIGITAL
    MIL-PRF-19500-120 Revision D:2015 TRANSISTOR, NPN, SILICON, SWITCHING, LOW-POWER, THROUGH-HOLE MOUNT, TYPE 2N706, QUALITY LEVEL JAN
    MIL-PRF-19500-428 Revision H:2011 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A AND 2N4416AUB, JAN, JANTX, JANTXV, AND JANS
    MIL-PRF-19500-548 Revision J:2015 COUPLER, OPTOELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE, THROUGH HOLE AND SURFACE MOUNT, TYPES 4N47, 4N48, AND 4N49, QUALITY LEVELS: JAN, JANTX, JANTXV, AND JANS
    MIL-PRF-19500-703 Revision E:2016 TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7479, 2N7480, AND 2N7481, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
    MIL-PRF-19500-225 Revision K:2011 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, TYPES 2N1711, 2N1711S, 2N1890, AND 2N1890S, JAN, JANTX, AND JANTXV
    MIL-STD-750-4 Base Document:2012 Diode Electrical Test Methods for Semiconductor Devices Part 4: Test Methods 4000 Through 4999
    MIL-PRF-19500-669 Base Document:2000 SEMICONDUCTOR DEVICE, DIODE, SILICON, SURFACE MOUNT POWER RECTIFIER, TYPES 1N6804UEG2 THROUGH 1N6810UEG2 JAN, JANTX AND JANTXV
    MIL-PRF-19500-446 Revision E:2008 SEMICONDUCTOR DEVICE, SILICON, HIGH-POWER, SINGLE PHASE, FULL WAVE BRIDGE RECTIFIER, TYPES SPA25, SPB25, SPC25, AND SPD25 JAN, JANTX, AND JANTXV
    MIL-PRF-19500-620 Revision K:2016 SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N5822, 1N6864, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
    MIL-PRF-19500-691 Base Document:2001 SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, 1N4148UE2 JAN, JANTX, AND JANJ
    DSCC 91011 : B SEMICONDUCTOR DEVICE, DIODE, ULTRA FAST
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    SAE AS 6171 : 2016 TEST METHODS STANDARD; GENERAL REQUIREMENTS, SUSPECT/COUNTERFEIT, ELECTRICAL, ELECTRONIC, AND ELECTROMECHANICAL PARTS
    IEC 62258-1:2009 Semiconductor die products - Part 1: Procurement and use
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