BS QC 750005:1987
|
Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes |
BS EN 150007:1993
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated bipolar transistors for high frequency amplification |
BS EN 120006:1993
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: pin-photodiodes for fibre optic applications |
BS G 209:1970
|
Specification for transformer rectifier units |
BS EN 150003:1993
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated bipolar transistors for low frequency amplification |
BS QC 750001:1986
|
Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Signal diodes, switching diodes and controlled avalanche diodes |
BS 9305 N001:1972
|
Detail specification for silicon voltage regulator diodes. 1.5 W, 3.3 to 33 V (5%), hermetically sealed. General application category Q |
BS QC 750103:1990
|
Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for low-frequency amplification |
BS 9301 N002:1971
|
Detail specification for general purpose silicon signal diodes. 150 mA, 150 V, hermetically sealed, glass encapsulation. General application category Q |
BS EN 150011:1993
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated thyristors |
BS 9364 N016:1979
|
Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
BS CECC 90000:1991
|
Harmonized system of quality assessment for electronic components. Generic specification: monolithic integrated circuits |
BS CECC 20000:1983
|
Harmonized system of quality assessment for electronic components: generic specification: semiconductor optoelectronic and liquid crystal devices |
BS CECC 90000:1985
|
Harmonized system of quality assessment for electronic components. Generic specification: monolithic integrated circuits |
BS 9305 N041:1972
|
Detail specification for silicon voltage regulator diodes. 400 mW, 2.7 to 33 V (5%), hermetically sealed, glass encapsulation. General application category Q |
BS CECC 90104:1981
|
Specification for harmonized system of quality assessment for electronic components. Family specification: C. Mos digital integrated circuits, series 4000B and 4000UB |
BS EN 150012:1993
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: single gate field-effect transistors |
BS QC 750110:1990
|
Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Reverse blocking triode thyristors, ambient and case-rated, up to 100 A |
BS EN 120002:1993
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: infrared emitting diodes, infrared emitting diode arrays |
BS 9364 N017:1979
|
Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level |
BS QC 750107:1991
|
Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Case-rated bipolar transistors for high-frequency amplifications |
BS EN 150010:1993
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: ambient rated thyristors |
BS CECC 50008:1982
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: ambient-rated rectifier diodes |
BS EN 120003:1993
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Phototransistors, photodarlington transistors, phototransistor arrays |
BS 6493-1.1:1984
|
Semiconductor devices. Discrete devices General |
BS CECC 63000:1990
|
Harmonized system of quality assessment for electronic components. Generic specification: film and hybrid integrated circuits |
BS CECC 90103:1983
|
Specification for harmonized system of quality assessment for electronic components. Family specification: digital integrated TTL low power SCHOTTKY circuits, series 54LS, 64LS, 74LS, 84LS |
BS CECC 50000:1987
|
Harmonized system of quality assessment for electronic components. Generic specification: discrete semiconductor devices |
BS 9450:1998
|
Specification for integrated electronic circuits and micro-assemblies of assessed quality (capability approval procedures). Generic data and methods of test |
BS CECC 90104:1990
|
Specification for harmonized system of quality assessment for electronic components. Family specification: C. MOS digital integrated circuits series 4000 B and 4000 UB |
BS 9364 N013:1979
|
Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
BS EN 150004:1993
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: bipolar transistors for switching applications |
BS 6943:1988
|
Classification of shapes of electronic components for placement on printed wiring boards |
BS EN 150013:1993
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: current regulator and current reference diodes |
BS QC 750108:1990
|
Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A |
BS 9364 N008 and N010:1978
|
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level |
BS EN 120000:1996
|
Harmonized system of quality assessment for electronic components. General specification: semiconductor optoelectronic and liquid crystal devices |
BS 9400:1970
|
Specification for integrated electronic circuits and micro-assemblies of assessed quality (qualification approval procedures): generic data and methods of test |
BS 9300:1969
|
Specification for semiconductor devices of assessed quality: generic data and methods of test |
BS CECC 90103:1980
|
Specification for harmonized system of quality assessment for electronic components. Family specification: digital integrated TTL low power SCHOTTKY circuits, series 54LS, 64LS, 74LS, 84LS |
BS EN 150006:1993
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Variable capacitance diode(s) |
BS EN 120005:1993
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications) |
BS EN 150001:1993
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: general purpose semiconductor diodes |
BS QC 750112:1988
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz |
BS E9375:1975
|
Specification. Harmonized system of quality assessment for electronic components. Blank detail specification: voltage regulator diodes and voltage reference diodes excluding precision-voltage temperature-compensated reference diodes |
BS 9305 N042:1972
|
Detail specification for silicon voltage regulator diodes. 1.5 W, 6.8 to 200 V (5%), hermetically sealed. General application category C |
BS 9364 N007 and N009:1978
|
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
BS QC 760000:1990
|
Harmonized system of quality assessment for electronic components. Film and hybrid film integrated circuits. Generic specification |
BS EN 120004:1993
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Ambient rated photocouplers with phototransistor output |
BS 9450:1975
|
Specification for integrated electronic circuits and micro-assemblies of assessed quality (capability approval procedures): generic data and methods of test |
BS CECC 90101:1980
|
Specification for harmonized system of quality assessment for electronic components. Family specification: digital integrated TTL circuits, series 54, 64, 74, 84 |
BS QC 750102:1990
|
Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Ambient-rated bipolar transistors for low and high-frequency amplification |
BS CECC 50009:1982
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated rectifier diodes |
BS 9305 N044:1974
|
Detail specification for silicon voltage regulator diodes. 1.0 W, 3.3 to 33 V (5%), hermetically sealed. Full assessment level |
BS 9364 N012:1978
|
Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level |
BS 9364 N011:1978
|
Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
BS EN 190000:1996
|
Harmonized system of quality assessment for electronic components. Generic specification: monolithic integrated circuits |
BS E9372:1976
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: ambient-rated bipolar transistors for low and high frequency amplification |
EN 190000:1995
|
Generic Specification: Monolithic integrated circuits |
EN 150012 : 1991
|
Blank Detail Specification: Single gate field-effect transistors |