BS 9300 C678-721:1971
|
Detail specification for silicon voltage regulator diodes |
BS G 209:1970
|
Specification for transformer rectifier units |
BS 9300 C599:1971
|
Detail specification for silicon microwave switching diode, rod mounted |
BS 9305 N001:1972
|
Detail specification for silicon voltage regulator diodes. 1.5 W, 3.3 to 33 V (5%), hermetically sealed. General application category Q |
BS 9301 N002:1971
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Detail specification for general purpose silicon signal diodes. 150 mA, 150 V, hermetically sealed, glass encapsulation. General application category Q |
BS 9300 C841-849:1971
|
Detail specification for silicon voltage regulator diodes |
BS 9300 C780-831:1971
|
Detail specification for silicon voltage regulator diodes |
BS CECC 20000:1983
|
Harmonized system of quality assessment for electronic components: generic specification: semiconductor optoelectronic and liquid crystal devices |
BS 9300 C405-429:1971
|
Detail specifications for silicon voltage-regulator diodes |
BS 9305 N041:1972
|
Detail specification for silicon voltage regulator diodes. 400 mW, 2.7 to 33 V (5%), hermetically sealed, glass encapsulation. General application category Q |
BS 9300 C534:1971
|
Detail specification for silicon coaxial resistive switching diode |
BS 9364 N017:1979
|
Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level |
BS 9300 C377-378:1971
|
Detail specifications for silicon coaxial mixer diodes |
BS 9300 C778:1971
|
Detail specification for a matched pair of germanium coaxial mixer diodes |
BS 9364 N011:1978
|
Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
BS CECC 50008:1982
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: ambient-rated rectifier diodes |
BS CECC 50000:1987
|
Harmonized system of quality assessment for electronic components. Generic specification: discrete semiconductor devices |
BS 9450:1998
|
Specification for integrated electronic circuits and micro-assemblies of assessed quality (capability approval procedures). Generic data and methods of test |
BS CECC 63101:1985
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: film and hybrid integrated circuits |
BS 9364 N013:1979
|
Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
BS CECC 90301:1985
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: integrated line transmitters and receivers |
BS 9364 N008 and N010:1978
|
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level |
BS 9400:1970
|
Specification for integrated electronic circuits and micro-assemblies of assessed quality (qualification approval procedures): generic data and methods of test |
BS CECC 90302:1986
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: integrated voltage comparators |
BS EN 150001:1993
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: general purpose semiconductor diodes |
BS 9305 N042:1972
|
Detail specification for silicon voltage regulator diodes. 1.5 W, 6.8 to 200 V (5%), hermetically sealed. General application category C |
BS 9364 N007 and N009:1978
|
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
BS 9300 C771-772:1971
|
Detail specification for coaxial mixer diodes |
BS 9300 C762:1971
|
Detail specification for mixer diodes for use at X-band frequencies |
BS 9450:1975
|
Specification for integrated electronic circuits and micro-assemblies of assessed quality (capability approval procedures): generic data and methods of test |
BS 9300 C667-668:1971
|
Detail specification for silicon avalanche rectifier diodes |
BS 9300 C582-584:1971
|
Detail specifications for reverse blocking triode thyristors |
BS 9300 C199-276:1971
|
Detail specification for silicon voltage-regulator diodes |
BS CECC 50009:1982
|
Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated rectifier diodes |
BS 9305 N044:1974
|
Detail specification for silicon voltage regulator diodes. 1.0 W, 3.3 to 33 V (5%), hermetically sealed. Full assessment level |
BS 9364 N012:1978
|
Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level |
BS 9300 C476:1973
|
Detail specification for silicon avalanche rectifier diode |
BS 9300 C379-388:1971
|
Detail specifications for silicon stud mounted, power rectifier diodes |
BS 9300 C776-777:1971
|
Detail specification for germanium coaxial mixer diodes |
BS 9364 N016:1979
|
Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |