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  • IEC 60747-8-4:2004

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    Superseded A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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    Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications

    Available format(s):  Hardcopy, PDF, PDF 3 Users, PDF 5 Users, PDF 9 Users

    Superseded date:  13-01-2014

    Language(s):  English - French

    Published date:  24-09-2004

    Publisher:  International Electrotechnical Committee

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    Table of Contents - (Show below) - (Hide below)

    FOREWORD
    1 Scope
    2 Normative references
    3 Terms and definitions
      3.1 General terms
      3.2 Equivalent circuit
      3.3 Terms related to ratings and characteristics
      3.4 Conventional used terms
    4 Letter symbols
      4.1 Additional general subscripts
      4.2 List of additional letter symbols
    5 Essential ratings and characteristics
      5.1 General
      5.2 Ratings (limiting values)
      5.3 Characteristics
    6 Measuring methods
      6.1 General
      6.2 Verification of ratings (limiting values)
      6.3 Methods of measurement
    7 Acceptance and reliability (revised from Clause 7 of
      IEC 60747-8)
      7.1 Endurance and reliability tests, and test methods
      7.2 Type tests and routine tests
    Bibliography

    Abstract - (Show below) - (Hide below)

    Gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes:type B depletion (normally on) type and Type C enhancement (normally off) type.

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    Development Note Stability Date: 2013. (10/2012)
    Document Type Standard
    Publisher International Electrotechnical Committee
    Status Superseded
    Superseded By

    Standards Referencing This Book - (Show below) - (Hide below)

    IEC 60747-7:2010 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors
    IEC PAS 62180:2000 Electrostatic discharge (ESD) sensitivity testing machine model (MM)
    IEC 60747-9:2007 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
    IEC 60747-8:2010 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
    IEC 60747-1:2006+AMD1:2010 CSV Semiconductor devices - Part 1: General
    IEC 60747-2:2016 Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
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