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  • IEC 62047-9:2011

    Current The latest, up-to-date edition.

    Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

    Available format(s):  Hardcopy, PDF, PDF 3 Users, PDF 5 Users, PDF 9 Users

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    Published date:  13-07-2011

    Publisher:  International Electrotechnical Committee

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    Table of Contents - (Show below) - (Hide below)

    FOREWORD
    1 Scope
    2 Normative references
    3 Measurement methods
    Annex A (informative) - Example of bonding force
    Annex B (informative) - An example of the fabrication
            process for three-point bending specimens
    Bibliography

    Abstract - (Show below) - (Hide below)

    IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.

    General Product Information - (Show below) - (Hide below)

    Development Note Stability Date: 2018. (09/2017)
    Document Type Standard
    Publisher International Electrotechnical Committee
    Status Current

    Standards Referenced By This Book - (Show below) - (Hide below)

    BS EN 62047-15:2015 Semiconductor devices. Micro-electromechanical devices Test method of bonding strength between PDMS and glass
    17/30352696 DC : DRAFT SEP 2017 BS IEC 62047-31 ED1.0 - SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 31: FOUR-POINT BENDING TEST METHOD FOR INTERFACIAL ADHESION ENERGY OF LAYERED MEMS MATERIALS
    I.S. EN 62047-15:2015 SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 15: TEST METHOD OF BONDING STRENGTH BETWEEN PDMS AND GLASS
    CEI EN 62047-15 : 2016 SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 15: TEST METHOD OF BONDING STRENGTH BETWEEN PDMS AND GLASS
    IEC 62047-15:2015 Semiconductor devices - Micro-electromechanical devices - Part 15: Test method of bonding strength between PDMS and glass
    14/30296140 DC : 0 BS EN 62047-25 - SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 25: SILICON-BASED MEMS FABRICATION TECHNOLOGY - MEASUREMENT METHOD OF PULL-PRESS AND SHEARING STRENGTH OF MICRO BONDING AREA
    14/30217668 DC : 0 BS EN 62047-15 - SEMICONDUCTOR DEVICES - MICRO - ELECTROMECHANICAL DEVICES - PART 14: FORMING LIMIT MEASURING METHOD OF METALLIC FILM MATERIALS
    EN 62047-15:2015 Semiconductor devices - Micro-electromechanical devices - Part 15: Test method of bonding strength between PDMS and glass

    Standards Referencing This Book - (Show below) - (Hide below)

    IEC 62047-4:2008 Semiconductor devices - Micro-electromechanical devices - Part 4: Generic specification for MEMS
    ISO 6892-1:2016 Metallic materials Tensile testing Part 1: Method of test at room temperature
    IEC 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
    ASTM E 8M : 2004 Standard Test Methods for Tension Testing of Metallic Materials [Metric] (Withdrawn 2008)
    IEC 60747-14-1:2010 Semiconductor devices - Part 14-1: Semiconductor sensors - Generic specification for sensors
    IEC 60749-19:2003+AMD1:2010 CSV Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength
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