• MIL-PRF-19500-615 Revision H:2017

    Current The latest, up-to-date edition.

    Transistor, Field Effect Radiation Hardened Encapsulated (Through-Hole and Surface Mount Package) P-Channel, Silicon, Types 2N7382 and 2N7383, JANTXV M, D, R, and F and JANS M, D, R, and F

    Available format(s):  PDF

    Language(s):  English

    Published date:  18-01-2017

    Publisher:  US Military Specs/Standards/Handbooks

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    Table of Contents - (Show below) - (Hide below)

    1. SCOPE
    2. APPLICABLE DOCUMENTS
    3. REQUIREMENTS
    4. VERIFICATION
    5. PACKAGING
    6. NOTES

    Abstract - (Show below) - (Hide below)

    Specifies the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications.

    Scope - (Show below) - (Hide below)

    This specification covers the performance requirements for a P-channel, radiation hardened (total dose and single event effects (SEE)), enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each device type, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels (\"M\", \"D\", \"R\" and \"F\") are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.

    General Product Information - (Show below) - (Hide below)

    Development Note SUPERSEDES MIL S 19500/615 (02/2000)
    Document Type Standard
    Publisher US Military Specs/Standards/Handbooks
    Status Current
    Supersedes

    Standards Referencing This Book - (Show below) - (Hide below)

    MIL-PRF-19500 Revision P:2010 SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
    MIL-STD-750 Revision F:2011 TEST METHODS FOR SEMICONDUCTOR DEVICES
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