09/30153670 DC : 0
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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BS ISO 14237 - SURFACE CHEMICAL ANALYSIS - SECONDARY-ION MASS SPECTROMETRY - DETERMINATION OF BORON ATOMIC CONCENTRATION IN SILICON USING UNIFORMLY DOPED MATERIALS
Hardcopy , PDF
31-08-2010
English
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Foreword
Introduction
1 Scope
2 Normative references
3 Principle
4 Reference materials
4.1 Primary reference material
4.2 Secondary reference materials
5 Apparatus
6 Specimen
7 Procedure
7.1 Adjustment of secondary ion mass spectrometer
7.2 Optimising the secondary ion mass spectrometer settings
7.3 Specimen introduction
7.4 Detected ions
7.5 Calibration
7.5.1 Measurement procedure for CRM
7.5.2 Measurement procedure for bulk RMs
7.5.3 Calibration of bulk RMs
7.6 Measurement of test specimen
7.6.1 Measurement
7.6.2 Determination of working relative sensitivity factor
8 Expression of results
8.1 Method of calculation
8.2 Precision
9 Reporting
Annex A (informative) Determination of carrier density in
silicon wafer
A.0 Introduction
A.1 Determination of carrier density in silicon bulk samples
A.2 Determination of carrier density in epitaxial silicon
layers
A.2.1 Direct determination of carrier density
A.2.2 Conversion from resistivity
A.2.3 Standards for measuring thickness of epitaxial
layers
A.2.4 Alternative method for determining thickness of
epitaxial layers
A.3 Summary
A.3.1 Bulk silicon specimens
A.3.2 Epitaxial silicon specimens
Annex B (informative) Boron isotope ratio measured by SIMS
B.0 Introduction
B.1 Test specimen
B.2 Procedure of SIMS analysis
B.3 Results of isotope ratio analysis
Annex C (normative) Procedures for evaluation of apparatus
performance
C.0 Introduction
C.1 Measurement procedure of bulk RMs
C.2 Mass resolution
C.3 Minimum ion intensity
C.4 Minimum precision
C.5 Linearity of measurement
C.5.1 Determination of relative sensitivity factors
C.5.2 Evaluation of linearity
Annex D (informative) Statistical report of interlaboratory test
D.0 Introduction
D.1 References
D.2 Design of test programme
D.3 Test samples
D.4 Procedure of SIMS analysis
D.5 Statistical procedures
D.5.1 Scrutiny for consistency and outliers
D.5.2 Computation of repeatability and reproducibility
D.6 Results of statistical analysis
| Committee |
CII/60
|
| DocumentType |
Draft
|
| Pages |
30
|
| PublisherName |
British Standards Institution
|
| Status |
Superseded
|
| SupersededBy |
| ISO 18114:2003 | Surface chemical analysis Secondary-ion mass spectrometry Determination of relative sensitivity factors from ion-implanted reference materials |
| ISO 17560:2014 | Surface chemical analysis Secondary-ion mass spectrometry Method for depth profiling of boron in silicon |
| ISO 5725-2:1994 | Accuracy (trueness and precision) of measurement methods and results Part 2: Basic method for the determination of repeatability and reproducibility of a standard measurement method |
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