ASTM C 863 : 2000 : R2022
Current
The latest, up-to-date edition.
Standard Test Method for Evaluating Oxidation Resistance of Silicon Carbide Refractories at Elevated Temperatures
Hardcopy , PDF
English
09-11-2022
Important note : Users cannot be edited or removed once added to your Multi user PDF.| Committee |
C 08
|
| DocumentType |
Test Method
|
| Pages |
2
|
| PublisherName |
American Society for Testing and Materials
|
| Status |
Current
|
| Supersedes |
1.1This test method covers the evaluation of the oxidation resistance of silicon carbide refractories at elevated temperatures in an atmosphere of steam. The steam is used to accelerate the test. Oxidation resistance is the ability of the silicon carbide (SiC) in the refractory to resist conversion to silicon dioxide (SiO2) and its attendant crystalline growth.
1.2This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.
1.3This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.
| ASTM C 830 : 2000 : R2023 | Standard Test Methods for Apparent Porosity, Liquid Absorption, Apparent Specific Gravity, and Bulk Density of Refractory Shapes by Vacuum Pressure |
| ASTM C 830 : 2000 : R2016 | Standard Test Methods for Apparent Porosity, Liquid Absorption, Apparent Specific Gravity, and Bulk Density of Refractory Shapes by Vacuum Pressure |
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