ASTM E 1855 : 2004 : EDT 1
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
Hardcopy , PDF
11-11-2014
English
01-06-2004
Committee |
E 10
|
DocumentType |
Test Method
|
Pages |
11
|
PublisherName |
American Society for Testing and Materials
|
Status |
Superseded
|
SupersededBy | |
Supersedes |
1.1 This test method covers the use of 2N2222A silicon bipolar transistors as dosimetry sensors in the determination of neutron energy spectra, and as silicon 1-MeV equivalent displacement damage fluence monitors.
1.2 The neutron displacement damage is especially valuable as a spectrum sensor in the range 0.1 to 2.0 MeV when fission foils are not available. It has been applied in the fluence range between 2 × 10 12 n/cm2 and 1 × 1014 n/cm2 and should be useful up to 1015 n/cm2. This test method details the steps for the acquisition and use of silicon 1-MeV equivalent fluence information (in a manner similar to the use of activation foil data) for the determination of neutron spectra.
1.3 In addition, this sensor can provide important confirmation of neutron spectra determined with other sensors, and yields a direct measurement of the silicon 1-MeV fluence by the transfer technique.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory requirements prior to use.
ASTM E 721 : 2016 | Standard Guide for Determining Neutron Energy Spectra from Neutron Sensors for Radiation-Hardness Testing of Electronics |
ASTM F 1190 : 2018 | Standard Guide for Neutron Irradiation of Unbiased Electronic Components |
ASTM E 1854 : 2013 | Standard Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts |
ASTM F 980 : 2016 | Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices |
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