ASTM F 108 : 1988 : EDT 1
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
Test Method for Resistivity of Silicon Epitaxial Layers by the Three-Probe Voltage Breakdown Method (Withdrawn 1993)
Hardcopy , PDF
21-08-2021
English
01-01-2014
CONTAINED IN VOL 10.05 1996 Measures electrical resistivity of silicon epitaxial layers with surface perfection suitable for semiconductor device fabrication deposited on single-crystal substrates of lower resistivity and same conductivity type.
DocumentType |
Test Method
|
Pages |
6
|
ProductNote |
e1 NOTE-Figures 1,2,3, and 5 were editorially renumbered in August 1989.
|
PublisherName |
American Society for Testing and Materials
|
Status |
Superseded
|
Supersedes |
ASTM E 177 : 2014 : REDLINE | Standard Practice for Use of the Terms Precision and Bias in ASTM Test Methods |
ASTM F 95 : 1989 : R2000 | Standard Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer (Withdrawn 2003) |
ASTM D 1125 : 2014 : REDLINE | Standard Test Methods for Electrical Conductivity and Resistivity of Water (Withdrawn 2023) |
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