ASTM F 108 : 1988 : EDT 1
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
Test Method for Resistivity of Silicon Epitaxial Layers by the Three-Probe Voltage Breakdown Method (Withdrawn 1993)
Available format(s)
PDF
Language(s)
English
Published date
01-01-2014
Superseded date
21-08-2021
€65.37
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CONTAINED IN VOL 10.05 1996 Measures electrical resistivity of silicon epitaxial layers with surface perfection suitable for semiconductor device fabrication deposited on single-crystal substrates of lower resistivity and same conductivity type.
| DocumentType |
Test Method
|
| Pages |
6
|
| ProductNote |
e1 NOTE-Figures 1,2,3, and 5 were editorially renumbered in August 1989.
|
| PublisherName |
American Society for Testing and Materials
|
| Status |
Superseded
|
| Supersedes |
| ASTM E 177 : 2014 : REDLINE | Standard Practice for Use of the Terms Precision and Bias in ASTM Test Methods |
| ASTM F 95 : 1989 : R2000 | Standard Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer (Withdrawn 2003) |
| ASTM D 1125 : 2014 : REDLINE | Standard Test Methods for Electrical Conductivity and Resistivity of Water (Withdrawn 2023) |
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