ASTM F 1190 : 2018 : REDLINE
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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Standard Guide for Neutron Irradiation of Unbiased Electronic Components
20-06-2024
English
01-03-2018
CONTAINED IN VOL. 10.04, 2018 Describes the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components (integrated circuits, transistors, and diodes) to neutron radiation from a nuclear reactor source to determine the permanent damage in the components.
Committee |
E 10
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DocumentType |
Redline
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Pages |
6
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PublisherName |
American Society for Testing and Materials
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Status |
Superseded
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SupersededBy |
1.1This guide strictly applies only to the exposure of unbiased silicon (Si) or gallium arsenide (GaAs) semiconductor components (integrated circuits, transistors, and diodes) to neutron radiation to determine the permanent damage in the components. Validated 1-MeV displacement damage functions codified in National Standards are not currently available for other semiconductor materials.
1.2Elements of this guide, with the deviations noted, may also be applicable to the exposure of semiconductors comprised of other materials except that validated 1-MeV displacement damage functions codified in National standards are not currently available.
1.3Only the conditions of exposure are addressed in this guide. The effects of radiation on the test sample should be determined using appropriate electrical test methods.
1.4This guide addresses those issues and concerns pertaining to irradiations with neutrons.
1.5System and subsystem exposures and test methods are not included in this guide.
1.6The range of interest for neutron fluence in displacement damage semiconductor testing range from approximately 109 to 1016 1-MeV n/cm2.
1.7This guide does not address neutron-induced single or multiple neutron event effects or transient annealing.
1.8This guide provides an alternative to Test Method 1017, Neutron Displacement Testing, a component of MIL-STD-883 and MIL-STD-750.
1.9This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.
1.10This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.
MIL-STD-883 Revision K:2016 | TEST METHOD STANDARD - MICROCIRCUITS |
ASTM E 720 : 2016 : REDLINE | Standard Guide for Selection and Use of Neutron Sensors for Determining Neutron Spectra Employed in Radiation-Hardness Testing of Electronics |
ASTM E 1855 : 2015 : REDLINE | Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors |
ASTM E 2450 : 2016 : REDLINE | Standard Practice for Application of CaF<inf>2</inf>(Mn) Thermoluminescence Dosimeters in Mixed Neutron-Photon Environments |
ASTM F 980 : 2016 : REDLINE | Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices |
ASTM E 265 : 2015 : REDLINE | Standard Test Method for Measuring Reaction Rates and Fast-Neutron Fluences by Radioactivation of Sulfur-32 |
MIL-STD-750 Revision F:2011 | TEST METHODS FOR SEMICONDUCTOR DEVICES |
CFR 49(PTS100-177) : OCT 2017 | TRANSPORTATION |
ASTM E 721 : 2016 : REDLINE | Standard Guide for Determining Neutron Energy Spectra from Neutron Sensors for Radiation-Hardness Testing of Electronics |
ASTM E 1854 : 2013 : REDLINE | Standard Practice for Ensuring Test Consistency in Neutron-Induced Displacement Damage of Electronic Parts |
ASTM E 722 : 2014 : REDLINE | Standard Practice for Characterizing Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics |
ASTM E 668 : 2013 : REDLINE | Standard Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices |
ASTM E 1249 : 2015 : REDLINE | Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources |
ASTM E 1250 : 2015 : REDLINE | Standard Test Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt-60 Irradiators Used in Radiation-Hardness Testing of Silicon Electronic Devices |
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