ASTM F 1262M : 2014
Current
The latest, up-to-date edition.
Standard Guide for Transient Radiation Upset Threshold Testing of Digital Integrated Circuits (Metric)
Hardcopy , PDF
English
01-06-2014
Committee |
F 01
|
DocumentType |
Guide
|
Pages |
6
|
PublisherName |
American Society for Testing and Materials
|
Status |
Current
|
1.1This guide is to assist experimenters in measuring the transient radiation upset threshold of silicon digital integrated circuits exposed to pulses of ionizing radiation greater than 103 Gy (matl.)/s.
1.1.1Discussion—This document is intended to be a guide to determine upset threshold, and is not intended to be a stand-alone document.
1.2This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
ASTM F 1893 : 1998 | Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices |
ASTM E 666 : 2021 | Standard Practice for Calculating Absorbed Dose From Gamma or X Radiation |
ASTM F 1893 : 2018 | Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices (Withdrawn 2023) |
ASTM F 1893 : 2011 | Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices |
ASTM E 666 : 2014 | Standard Practice for Calculating Absorbed Dose From Gamma or X Radiation |
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