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ASTM F 1388 : 1992 : R2000

Withdrawn

Withdrawn

A Withdrawn Standard is one, which is removed from sale, and its unique number can no longer be used. The Standard can be withdrawn and not replaced, or it can be withdrawn and replaced by a Standard with a different number.

Standard Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors (Withdrawn 2003)

Available format(s)

Hardcopy , PDF

Withdrawn date

05-11-2013

Language(s)

English

Published date

01-01-2000

€67.30
Excluding VAT

CONTAINED IN VOL. 10.05, 2001 Covers the measurement of generation velocity and generation lifetime of silicon wafers. May be applied to insulators other than silicon dioxide and to semiconductor materials other than silicon, but the details of capacitor fabrication and the interpretation and analyses of data in such cases are not given in this test method (which applies to both bulk and epitaxial silicon).

Committee
F 01
DocumentType
Test Method
Pages
8
PublisherName
American Society for Testing and Materials
Status
Withdrawn

This standard was transferred to SEMI (www.semi.org) May 2003

1.1 This test method covers the measurement of generation lifetime and generation velocity of silicon wafers.

1.2 The measurement requires the fabrication of a guard-ring MOS (Metal-Oxide-Silicon) capacitor. This test method is therefore destructive to the silicon wafer.

1.3 This test may also be applied to semiconductor materials other than silicon and to insulators other than silicon dioxide, but the details of capacitor fabrication and the analyses and interpretation of data in such cases are not given in this test method.

1.4 Both p- and n-type silicon in the doping range from 1013 to 10 17 cm-3 can be evaluated by this test method. The approximate range of generation lifetime that can be measured is 1µs to 10 ms.

1.5 The test method is applicable to both bulk and epitaxial silicon. If epitaxial silicon is used, the epitaxial layer must be of the same conductivity type as the substrate and should be at least twice as thick as the maximum depletion width in deep depletion to avoid errors caused by the proximity of the epitaxial interface (see 12.4).

1.6 It is necessary to complete the measurements described in Test Method F 1153 before performing the measurements described in this test method to determine the values of maximum capacitance, equilibrium minimum capacitance, and doping density.

1.7 A digital computer capable of controlling the instruments and recording data is required and significantly simplifies and improves the accuracy of the data acquisition and analysis process.

1.8 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in 11.5 and 11.8.

ASTM F 1535 : 2000 Standard Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance (Withdrawn 2003)

ASTM F 1241 : 1995 : R2000 Standard Terminology of Silicon Technology (Withdrawn 2003)

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