ASTM F 1892 : 2026
Current
The latest, up-to-date edition.
Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
English
01-06-2026
| Committee |
E 10
|
| DocumentType |
Guide
|
| Pages |
42
|
| PublisherName |
American Society for Testing and Materials
|
| Status |
Current
|
| Supersedes |
1.1This guide presents background and guidelines for establishing an appropriate sequence of tests and data analysis procedures for determining the ionizing radiation (total dose) hardness of microelectronic devices for dose rates below 300 rad(SiO2)/s. These tests and analysis will be appropriate to assist in the determination of the ability of the devices under test to meet specific hardness requirements or to evaluate the parts for use in a range of radiation environments.
1.2The methods and guidelines presented will be applicable to the characterization, qualification, and lot acceptance of silicon-based MOS and bipolar discrete devices and integrated circuits. They will be appropriate for treatment of the effects of electron and photon irradiation.
1.3This guide provides a framework for choosing a test sequence based on general characteristics of the parts to be tested and the radiation hardness requirements or end use of these parts.
1.4This guide provides for trade-offs between minimizing the conservative nature of the testing method and minimizing the required testing effort itself.
1.5Determination of an effective and economical hardness test typically will require several kinds of decisions. A partial enumeration of the decisions that typically must be made is as follows:
1.5.1Determination of the Need to Perform Device Characterization for Total Ionizing Dose—Each test campaign will have specific test objectives that will determine the intensity, energy spectra, and dose rates to be delivered to the devices under test. In some cases, it may be more appropriate to use a worst-case testing scheme that does not require device characterization but rather demonstration of post-irradiation survivability of the device. Other test campaigns will require accurate characterization of device performance prior to, during, and after irradiation for complete device characterization for the specific dose environment.
1.5.2Determination of Dose Rate—For each device type tested, it is critical to determine the effect of dose rate on the radiation sensitivity of the device. As necessary, the appropriate level of detail of such a characterization also must be determined, including range, duration, and total cumulative dose.
1.5.2.1Determination of an Effective Strategy for Minimizing the Effects of Irradiation Dose Rate on the Test Result—The results of radiation testing on some types of devices are relatively insensitive to the dose rate of the radiation applied in the test. In contrast, many MOS devices and some bipolar devices have a significant sensitivity to dose rate. Several different strategies for managing the dose rate sensitivity of test results will be discussed.
1.5.2.2Choice of an Effective Test Methodology—The selection of effective test methodologies will be discussed.
1.6Low Dose Requirements—Hardness testing of MOS and bipolar microelectronic devices for the purpose of qualification or lot acceptance is not necessary when the required hardness is 100 rad(SiO2) or lower.
1.7Sources—This guide will cover effects due to device testing using irradiation from photon sources, such as 60Co γ irradiators, 137Cs γ irradiators, and low energy (approximately 10 keV) X-ray sources. Other sources of test radiation such as LINACs, Van de Graaff sources, dymnamitrons, SEMs, and flash X-ray sources occasionally are used but are outside the scope of this guide.
1.8Displacement damage effects are outside the scope of this guide, as well.
1.9The values stated in SI units are to be regarded as the standard units for irradiation total dose.
1.10This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.
| ASTM F 1190 : 2024 | Standard Guide for Neutron Irradiation of Unbiased Electronic Components |
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