ASTM F 616M : 1996
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)
Hardcopy , PDF
11-11-2014
English
10-06-1996
Important note : Users cannot be edited or removed once added to your Multi user PDF.CONTAINED IN VOL. 10.04, 2009 Covers the measurement of MOSFET drain leakage current and is applicable to all enhancement-mode and depletion-mode MOSFETs.
| Committee |
F 01
|
| DocumentType |
Test Method
|
| Pages |
4
|
| ProductNote |
Reconfirmed 1996
|
| PublisherName |
American Society for Testing and Materials
|
| Status |
Superseded
|
| SupersededBy | |
| Supersedes |
1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current.
Note 1-MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor.
1.2 This test method is applicable to all enhancement-mode and depletion-mode MOSFETs. This test method specifies positive voltage and current, conventions specifically applicable to n-channel MOSFETs. The substitution of negative voltage and negative current makes the method directly applicable to p-channel MOSFETs.
1.3 The d-c test method is applicable for the range of drain voltages greater than 0 V but less than the drain breakdown voltage.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
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