ASTM F 616M : 1996 : R2003
Withdrawn
A Withdrawn Standard is one, which is removed from sale, and its unique number can no longer be used. The Standard can be withdrawn and not replaced, or it can be withdrawn and replaced by a Standard with a different number.
Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric) (Withdrawn 2009)
Hardcopy , PDF
31-12-2009
English
10-06-1996
Important note : Users cannot be edited or removed once added to your Multi user PDF.CONTAINED IN VOL. 10.04, 2009 Covers the measurement of MOSFET drain leakage current and is applicable to all enhancement-mode and depletion-mode MOSFETs.
| Committee |
F 01
|
| DocumentType |
Test Method
|
| Pages |
3
|
| ProductNote |
Reconfirmed 2003
|
| PublisherName |
American Society for Testing and Materials
|
| Status |
Withdrawn
|
| Supersedes |
1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current.
Note 1—MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor.
1.2 This test method is applicable to all enhancement-mode and depletion-mode MOSFETs. This test method specifies positive voltage and current, conventions specifically applicable to n-channel MOSFETs. The substitution of negative voltage and negative current makes the method directly applicable to p-channel MOSFETs.
1.3 This d-c test method is applicable for the range of drain voltages greater than 0 V but less than the drain breakdown voltage.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
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