ASTM F 95 : 1989 : R2000
Withdrawn
A Withdrawn Standard is one, which is removed from sale, and its unique number can no longer be used. The Standard can be withdrawn and not replaced, or it can be withdrawn and replaced by a Standard with a different number.
Standard Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer (Withdrawn 2003)
Hardcopy , PDF
05-11-2013
English
01-01-2000
Important note : Users cannot be edited or removed once added to your Multi user PDF.CONTAINED IN VOL. 10.05, 2001 Measures thickness of epitaxial layers of silicon deposited on silicon substrates using dispersive infrared spectrophotometer. Resistivity of substrate must be less than 0.02 cm at 23 deg C and that of layer must be greater than 0.1 cm at 23 deg C.
| Committee |
F 01
|
| DocumentType |
Test Method
|
| Pages |
8
|
| PublisherName |
American Society for Testing and Materials
|
| Status |
Withdrawn
|
This standard was transferred to SEMI (www.semi.org) May 2003
1.1 This test method provides a technique for the measurement of the thickness of epitaxial layers of silicon deposited on silicon substrates. A dispersive infrared spectrophotometer is used. For this measurement, the resistivity of the substrate must be less than 0.02[omega] cm at 23oC and the resistivity of the layer must be greater than 0.1[omega] cm at 23oC.
1.2 This technique is capable of measuring the thickness of both n- and p-type layers greater than 2 µm thick. With reduced precision, the technique may also be applied to both n- and p-type layers from 0.5 to 2 µm thick.
1.3 This test method is suitable for referee measurements.
1.4This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
| ASTM F 576 : 2001 | Standard Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by Ellipsometry (Withdrawn 2003) |
| ASTM F 419 : 1994 | Test Method for Determining Carrier Density in Silicon Epitaxial Layers by Capacitance-Voltage Measurements on Fabricated Junction or Schottky Diodes (Withdrawn 2001) |
| ASTM F 108 : 1988 : EDT 1 | Test Method for Resistivity of Silicon Epitaxial Layers by the Three-Probe Voltage Breakdown Method (Withdrawn 1993) |
| ASTM F 525 : 2000 : REV A | Standard Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe (Withdrawn 2003) |
| ASTM E 177 : 2014 : REDLINE | Standard Practice for Use of the Terms Precision and Bias in ASTM Test Methods |
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