ASTM F 996 : 2011 : R2018

1.1This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconductor-field-effect transistor (MOSFET) and an isolation dielectric in a parasitic MOSFET.2^,3^,4 The subthreshold technique is used to separate the ionizing radiation-induced inversion voltage shift, ΔV_INV into voltage shifts due to oxide trapped charge, ΔV_ot and interface traps, ΔV _it. This technique uses the pre- and post-irradiation drain to source current versus gate voltage characteristics in the MOSFET subthreshold region.

1.2Procedures are given for measuring the MOSFET subthreshold current-voltage characteristics and for the calculation of results.

1.3The application of this test method requires the MOSFET to have a substrate (body) contact.

1.4Both pre- and post-irradiation MOSFET subthreshold source or drain curves must follow an exponential dependence on gate voltage for a minimum of two decades of current.

1.5The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.

1.6This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.

1.7This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.