BS EN 62979:2017

FOREWORD
INTRODUCTION
1 Scope
2 Normative references
3 Terms and definitions
4 Thermal runaway test
5 Pass or fail criteria
6 Test report
Annex ZA (normative) - Normative references to
         international publications with their
         corresponding European publications

Defines a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating.

This document provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating.

This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.

The test specimens which employ P/N diodes as bypass diodes are exempted from the thermal runaway test required herein, because the capability of P/N diodes to withstand the reverse bias is sufficiently high.