BS EN IEC 60749-17:2019
Current
The latest, up-to-date edition.
Semiconductor devices. Mechanical and climatic test methods Neutron irradiation
Hardcopy , PDF
English
15-05-2019
The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation.
| Committee |
EPL/47
|
| DocumentType |
Standard
|
| ISBN |
9780539000627
|
| Pages |
12
|
| ProductNote |
THIS STANDARD ALSO REFERS TO ASTM E 1018
|
| PublisherName |
British Standards Institution
|
| Status |
Current
|
| Supersedes |
The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test. The objectives of the test are as follows: to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, and to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause6).
| Standards | Relationship |
| IEC 60749-17:2019 | Identical |
| EN IEC 60749-17:2019 | Identical |
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