BS ISO 14237:2010
Current
The latest, up-to-date edition.
Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials
Hardcopy , PDF
English
31-08-2010
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Foreword
Introduction
1 Scope
2 Normative references
3 Principle
4 Reference materials
5 Apparatus
6 Specimen
7 Procedure
8 Expression of results
9 Test report
Annex A (informative) - Determination of carrier density
in silicon wafer
Annex B (informative) - Boron isotope ratio measured by
SIMS
Annex C (normative) - Procedures for evaluation of
apparatus performance
Annex D (informative) - Statistical report on
interlaboratory test programme
Bibliography
Defines a secondary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron.
| Committee |
CII/60
|
| DevelopmentNote |
Supersedes 98/122632 DC. (05/2005) Supersedes 09/30153670 DC. (08/2010) Reviewed and confirmed by BSI, April 2016. (03/2016)
|
| DocumentType |
Standard
|
| Pages |
30
|
| PublisherName |
British Standards Institution
|
| Status |
Current
|
| Supersedes |
This International Standard specifies a secondary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range from 1×1016 atoms/cm3 to 1×1020 atoms/cm3.
| Standards | Relationship |
| ISO 14237:2010 | Identical |
| SEMI MF84:2012 | TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE |
| ISO 18114:2003 | Surface chemical analysis Secondary-ion mass spectrometry Determination of relative sensitivity factors from ion-implanted reference materials |
| SEMI MF723 : 2007E(R2012)E | PRACTICE FOR CONVERSION BETWEEN RESISTIVITY AND DOPANT OR CARRIER DENSITY FOR BORON-DOPED, PHOSPHOROUS-DOPED, AND ARSENIC-DOPED SILICON |
| SEMI MF1392:2007 | TEST METHOD FOR DETERMINING NET CARRIER DENSITY PROFILES IN SILICON WAFERS BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY PROBE |
| SEMI MF95 : 2007(R2018) | TEST METHOD FOR THICKNESS OF LIGHTLY DOPED SILICON EPITAXIAL LAYERS ON HEAVILY DOPED SILICON SUBSTRATES USING AN INFRARED DISPERSIVE SPECTROPHOTOMETER |
| SEMI MF374 :2012(R2018) | TEST METHOD FOR SHEET RESISTANCE OF SILICON EPITAXIAL, DIFFUSED, POLYSILICON, AND ION-IMPLANTED LAYERS USING AN IN-LINE FOUR-POINT PROBE WITH THE SINGLE-CONFIGURATION PROCEDURE |
| SEMI MF110 : 2007(R2018) | TEST METHOD FOR THICKNESS OF EPITAXIAL OR DIFFUSED LAYERS IN SILICON BY THE ANGLE LAPPING AND STAINING TECHNIQUE |
| ISO 17560:2014 | Surface chemical analysis Secondary-ion mass spectrometry Method for depth profiling of boron in silicon |
| ISO 5725-2:1994 | Accuracy (trueness and precision) of measurement methods and results Part 2: Basic method for the determination of repeatability and reproducibility of a standard measurement method |
| SEMI MF672 : 2007 | TEST METHOD FOR MEASURING RESISTIVITY PROFILES PERPENDICULAR TO THE SURFACE OF A SILICON WAFER USING A SPREADING RESISTANCE PROBE |
| SEMI MF43 : 2016 | TEST METHOD FOR RESISTIVITY OF SEMICONDUCTOR MATERIALS |
| SEMI MF674 : 2016 | PRACTICE FOR PREPARING SILICON FOR SPREADING RESISTANCE MEASUREMENTS |
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