BS ISO 17560:2014
Current
The latest, up-to-date edition.
Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon
Hardcopy , PDF
English
30-09-2014
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Foreword
Introduction
1 Scope
2 Normative reference
3 Symbols and abbreviations
4 Principle
5 Reference materials
6 Apparatus
7 Specimen
8 Procedure
9 Expression of results
10 Test report
Annex A (informative) - Statistical report of stylus
profilometry measurements
Bibliography
Defines a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration.
| Committee |
CII/60
|
| DevelopmentNote |
Supersedes 99/124265 DC. (09/2002) Supersedes 14/30296416 DC. (09/2014)
|
| DocumentType |
Standard
|
| Pages |
22
|
| PublisherName |
British Standards Institution
|
| Status |
Current
|
| Supersedes |
This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1×1016atoms/cm3 and 1×1020atoms/cm3, and to crater depths of 50nm or deeper.
| Standards | Relationship |
| ISO 17560:2014 | Identical |
| ISO 14237:2010 | Surface chemical analysis Secondary-ion mass spectrometry Determination of boron atomic concentration in silicon using uniformly doped materials |
| ISO 5725-2:1994 | Accuracy (trueness and precision) of measurement methods and results Part 2: Basic method for the determination of repeatability and reproducibility of a standard measurement method |
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