BS ISO 23812:2009

Foreword
Introduction
1 Scope
2 Normative references
3 Terms and definitions
4 Symbols and abbreviated terms
5 Requirements on multiple delta-layer reference materials
6 Measurement procedures
7 Calibration procedures
  7.1 Principle of calibration
  7.2 Determination of sputtering rate for reference material
  7.3 Calibration of the depth scale for test specimens
  7.4 Uncertainty in calibrated depth
8 Expression of results
  8.1 Calibration under the same sputtering conditions as used
      for the reference material
  8.2 Calibration using a sputtering rate different from that
      of the test specimen
  8.3 Calibration with respect to concentration
9 Test report
Annex A (informative) Projected range of oxygen-ion in silicon
Annex B (informative) Estimations of peak shifts due to atomic
                      mixing
Annex C (informative) Estimations of peak shift due to peak
                      coalescence
Annex D (informative) Derivation of uncertainty
Bibliography

Describes a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.

1.1

This International Standard specifies a procedure for calibrating the depth scale in a shallow region, less than 50nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.

1.2 This International Standard is not applicable to the surface-transient region where the sputtering rate is not in the steady state.

1.3 This International Standard is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.