BS PD9002(1976) : LATEST
Superseded
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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| DocumentType |
Standard
|
| PublisherName |
British Standards Institution
|
| Status |
Superseded
|
| BS 9561:1979 | Specification for lever operated switches of assessed quality: generic data and methods of test; general rules for the preparation of detail specifications |
| BS 9751:1979 | Blank detail specification for fixed insulated (unshielded) r.f. inductors at the full assessment level |
| BS 9612 N016:1979 | Detail specification for resistance welded seal quartz crystal units for oscillator applications. DN, DZ, DQ and DP enclosures, 0.8 to 20 MHz and 3.0 to 30 MHz frequency ranges. Fundamental thickness-shear mode, AT-cut, for operation over wide temperature ranges (non-temperature controlled). Full assessment level |
| BS 9612 N017:1979 | Detail specification for resistance welded seal quartz crystal units for oscillator applications. DN, DZ, DQ and DP enclosures, 0.8 to 20 MHz and 3.0 to 30 MHz frequency ranges. Fundamental thickness-shear mode, AT-cut, for operation over narrow temperature ranges (temperature controlled). Full assessment level |
| BS 9751 N0001:1980 | Detail specification for fixed insulated (unshielded) radio frequency inductors. Wire wound on ferrite, iron dust or phenolic cylindrical former. Full assessment level |
| BS 9364 N017:1979 | Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level |
| BS 9041:1978 | Rules for the preparation of detail specifications for gas filled microwave switching tubes of assessed quality: tunable and broadband TR tubes and TR limiters. Full assessment level |
| BS 9734:1978 | Sectional specification for pulse transformers of assessed quality for use in electronic equipment: full assessment level |
| BS 9364 N011:1978 | Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
| BS 9612 N005:1977 | Detail specification for cold welded seal quartz crystal units for oscillator applications. DN, DQ and DP enclosures, 0.8 to 20 MHz and 3.0 to 30 MHz frequency ranges. Fundamental thickness-shear mode, AT-cut, for operation over narrow temperature ranges (temperature controlled). Full assessment level |
| BS 9364 N013:1979 | Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
| BS 9073 N0034:1978 | Detail specification for fixed tantalum electrolytic capacitors. Porous anode, polar non-solid electrolyte. Tubular insulated metallic case, PTFE/elastomer seal, axial wire terminations. Full plus additional assessment level |
| BS 9612 N007:1977 | Detail specification for cold welded seal quartz crystal units for oscillator applications. DN, DQ and DP enclosures, 17 to 75 MHz frequency range. Third overtone thickness-shear mode, AT-cut, for operation over narrow temperature ranges (temperature controlled). Full assessment level |
| BS 9612 N008:1977 | Detail specification for cold welded seal quartz crystal units for oscillator applications. DN, DQ and DP enclosures, 50 to 125 MHz frequency range. Fifth overtone thickness-shear mode, AT-cut, for operation over wide temperature ranges (non-temperature controlled). Full assessment level |
| BS 9364 N008 and N010:1978 | Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level |
| BS 9612 N020:1979 | Detail specification for resistance welded seal quartz crystal units for oscillator applications. DN, DZ, DQ and DP enclosures, 50 to 125 MHz frequency range. Fifth overtone thickness-shear mode, AT-cut, for operation over wide temperature ranges (non-temperature controlled). Full assessment level |
| BS 9526 N0003:1979 | Detail specification for multi-contact edge socket electrical connectors. Single or double sided, open ended, guide key location, replaceable contacts, through-board solder or wire wrap terminations. Full assessment level |
| BS 9612 N018:1979 | Detail specification for resistance welded seal quartz crystal units for oscillator applications. DN, DZ, DQ and DP enclosures, 17 to 75 MHz frequency range. Third overtone thickness-shear mode, AT-cut, for operation over wide temperature ranges (non-temperature controlled). Full assessment level |
| BS 9563:1979 | Specification for rotary (manual) switches of assessed quality: generic data and methods of test; general rules for the preparation of detail specifications |
| BS 9075 N023:1978 | Detail specification for fixed monolithic ceramic dielectric capacitors (type 1B). Rectangular non-metallic case, centred wires on one face. Full assessment level |
| BS 9612 N006:1977 | Detail specification for cold welded seal quartz crystal units for oscillator applications. DN, 47 U/2, DQ and DP enclosures, 17 to 75 MHz frequency range. Third overtone thickness-shear mode, AT-cut, for operation over wide temperature ranges (non-temperature controlled). Full assessment level |
| BS 9364 N007 and N009:1978 | Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
| BS 9526 N0002:1979 | Detail specification for multi-contact edge socket electrical connectors. Single or double sided, open ended, metal fixing flanges, guide key location, replaceable contacts, through-board solder or wire wrap terminations. Full assessment level |
| BS 9612 N019:1979 | Detail specification for resistance welded seal quartz crystal units for oscillator applications. DN, DZ, DQ and DP enclosures, 17 to 75 MHz frequency range. Third overtone thickness-shear mode, AT-cut, for operation over narrow temperature ranges (temperature controlled). Full assessment level |
| BS 9564:1980 | Specification for push-button switches of assessed quality: generic data and methods of test; general rules for the preparation of detail specifications |
| BS 9450:1975 | Specification for integrated electronic circuits and micro-assemblies of assessed quality (capability approval procedures): generic data and methods of test |
| BS 9040:1978 | Specification for gas-filled microwave switching tubes of assessed quality: generic data and methods of test |
| BS 9526 N0001:1978 | Detail specification for multi-contact edge socket electrical connectors. Single or double sided, closed ended, replaceable contacts, through-board solder or wire wrap terminations. Full assessment level |
| BS 9612 N009:1977 | Detail specification for cold welded seal quartz crystal units for oscillator applications. DN, DQ and DP enclosures, 50 to 125 MHz frequency range. Fifth overtone thickness-shear mode, AT-cut, for operation over narrow temperature ranges (temperature controlled). Full assessment level |
| BS 9612 N010:1979 | Detail specification for cold welded seal quartz crystal units for oscillator applications. DK enclosure, 6.0 to 25 MHz frequency range. Fundamental thickness-shear mode, AT-cut, for operation over wide temperature ranges (non-temperature controlled). Full assessment level |
| BS 9364 N012:1978 | Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level |
| BS 9075 N024:1978 | Detail specification for fixed monolithic ceramic dielectric capacitors (type 2C1). Rectangular non-metallic case, centred wires on one face. Full assessment level |
| BS CECC 30401 023:1979 | Harmonized detail specification for fixed metallized polyethylene terephthalate film dielectric d.c. capacitors. Rectangular insulated non-metallic case, rigid radial terminations. Full assessment level |
| BS 9074 N007:1978 | Detail specification for fixed polystyrene film dielectric extended foil capacitors. Rectangular non-metallic case, unidirectional terminations. Full plus additional assessment level |
| BS 9612 N004:1977 | Detail specification for cold welded seal quartz crystal units for oscillator applications. DN, 47 U/2, DQ and DP enclosures, 0.8 to 20 MHz and 3.0 to 30 MHz frequency ranges. Fundamental thickness-shear mode, AT-cut, for operation over wide temperature ranges (non-temperature controlled). Full assessment level |
| BS 9612 N021:1979 | Detail specification for resistance welded seal quartz crystal units for oscillator applications. DN, DZ, DQ and DP enclosures, 50 to 125 MHz frequency range. Fifth overtone thickness-shear mode, AT-cut, for operation over narrow temperature ranges (temperature controlled). Full assessment level |
| BS 9364 N016:1979 | Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level |
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