BIAS-TEMPERATURE STABILITY TEST FOR METAL-OXIDE, SEMICONDUCTOR, FIELD-EFFECT TRANSISTORS (MOSFET)

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

01-01-2007

Publisher

Comitato Elettrotecnico Italiano

FOREWORD
INTRODUCTION
1 Scope
2 Terms and definitions
3 Test equipment
4 Test sample
5 Procedure
Annex A (informative) - Wafer level reliability test (WLR test)
Bibliography

Describes a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect transistors (MOSFET).

Committee	CT 309
DevelopmentNote	Classificazione CEI 47-1033. (09/2015)
DocumentType	Standard
Pages	20
PublisherName	Comitato Elettrotecnico Italiano
Status	Current

Standards	Relationship
EN 62373 : 2006	Identical
IEC 62373:2006	Identical

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CEI EN 62373 : 2007

BIAS-TEMPERATURE STABILITY TEST FOR METAL-OXIDE, SEMICONDUCTOR, FIELD-EFFECT TRANSISTORS (MOSFET)

Table of Contents

Abstract

General Product Information

International Equivalents

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