CEI EN 62418 : 2011
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICES - METALLIZATION STRESS VOID TEST
Hardcopy , PDF
English
01-01-2011
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FOREWORD
1 Scope
2 Test equipment
3 Test structure
4 Stress temperature
5 Procedure
6 Failure criteria
7 Data interpretation and lifetime extrapolation
(resistance change method)
8 Items to be specified and reported
Annex A (informative) - Stress migration
mechanism
Annex B (informative) - Technology-dependent
factors for aluminium
Annex C (informative) - Technology-dependent
factors for copper
Annex D (informative) - Precautions
Bibliography
Specifies a method of metallization stress void test and associated criteria.
| Committee |
CT 309
|
| DevelopmentNote |
Classificazione CEI 47-77. (11/2011)
|
| DocumentType |
Standard
|
| Pages |
22
|
| PublisherName |
Comitato Elettrotecnico Italiano
|
| Status |
Current
|
| Standards | Relationship |
| EN 62418 : 2010 | Identical |
| IEC 62418:2010 | Identical |
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