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CEI EN 62418 : 2011

Current

Current

The latest, up-to-date edition.

SEMICONDUCTOR DEVICES - METALLIZATION STRESS VOID TEST

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

01-01-2011

FOREWORD
1 Scope
2 Test equipment
3 Test structure
4 Stress temperature
5 Procedure
6 Failure criteria
7 Data interpretation and lifetime extrapolation
  (resistance change method)
8 Items to be specified and reported
Annex A (informative) - Stress migration
        mechanism
Annex B (informative) - Technology-dependent
        factors for aluminium
Annex C (informative) - Technology-dependent
        factors for copper
Annex D (informative) - Precautions
Bibliography

Specifies a method of metallization stress void test and associated criteria.

Committee
CT 309
DevelopmentNote
Classificazione CEI 47-77. (11/2011)
DocumentType
Standard
Pages
22
PublisherName
Comitato Elettrotecnico Italiano
Status
Current

Standards Relationship
EN 62418 : 2010 Identical
IEC 62418:2010 Identical

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€74.09
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