Foreword
1 Scope
2 Normative references
3 Measuring methods for photoemitters
3.1 Luminous intensity of light-emitting diodes (I[v])
3.2 Radiant intensity of infrared-emitting diodes (I[e])
3.3 Peak-emission wavelength (lambda[p]), spectral
radiation bandwidth (deltalambda), and number of
longitudinal modes (n[m])
3.4 Emission source length and width and astigmatism
of a laser diode without pigtail
3.5 Half-intensity angle and misalignment angle of
a photoemitter
4 Measuring methods for photosensitive devices
4.1 Reverse current under optical radiation of
photodiodes including devices with or without
pigtails (I[R(H)] or I[R(E)]), and collector
current under optical radiation of phototransistors
(I[C(H)] or I[C(E)])
4.2 Dark current for photodiodes I[R] and dark currents
for phototransistors I[CEO], I[ECO], I[EBO]
4.3 Collector-emitter saturation voltage V[CE(sat)] of
phototransistors
5 Measuring methods for photocouplers
5.1 Current transfer ratio (h[F(ctr)])
5.2 Input-to-output capacitance (C[io])
5.3 Isolation resistance between input and output
(r[IO])
5.4 Isolation test
5.5 Partial discharges of photocouplers
5.6 Collector-emitter saturation voltage V[CE(sat)] of
a photocoupler
5.7 Switching times t[on], t[off] of a photocoupler
5.8 Peak off-state current (I[DRM])
5.9 Peak on-state voltage (V[TM])
5.10 DC off-state current (I[BD])
5.11 DC on-state voltage (V[T])
5.12 Holding current (I[H])
5.13 Critical rate of rise of off-state voltage (dV/dt)
5.14 Trigger input current (I[FT])
5.15 Testing methods of electrical rating for
phototriac coupler
Annex A (informative) Cross references index