DIN EN 62373:2007-01
Current
The latest, up-to-date edition.
BIAS-TEMPERATURE STABILITY TEST FOR METAL-OXIDE, SEMICONDUCTOR, FIELD-EFFECT TRANSISTORS (MOSFET)
Hardcopy , PDF
German
01-01-2007
Important note : Users cannot be edited or removed once added to your Multi user PDF.
INTRODUCTION
1 Scope
2 Terms and definitions
3 Test equipment
3.1 Equipment
3.2 Requirement for handling
4 Test sample
4.1 Sample
4.2 Packaging
4.3 ESD protection circuit
5 Procedure
5.1 Initial measurement and read point measurement
5.2 Test
5.3 Notes for field MOSFET
5.4 Judgment
Annex A (informative) Wafer level reliability test (WLR test)
Bibliography
Figures
Defines a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect transistors (MOSFET).
| DevelopmentNote |
Supersedes DIN IEC 62373. (01/2007)
|
| DocumentType |
Standard
|
| Pages |
14
|
| PublisherName |
German Institute for Standardisation (Deutsches Institut für Normung)
|
| Status |
Current
|
| Supersedes |
| Standards | Relationship |
| BS EN 62373:2006 | Identical |
| NF EN 62373 : 2006 | Identical |
| I.S. EN 62373:2006 | Identical |
| NBN EN 62373 : 2007 | Identical |
| EN 62373 : 2006 | Identical |
| SN EN 62373 : 2006 | Identical |
| IEC 62373:2006 | Identical |
Access your standards online with a subscription
Features
-
Simple online access to standards, technical information and regulations.
-
Critical updates of standards and customisable alerts and notifications.
-
Multi-user online standards collection: secure, flexible and cost effective.