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EN 62979:2017

Current

Current

The latest, up-to-date edition.

Photovoltaic module - Bypass diode - Thermal runaway test

Published date

27-10-2017

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FOREWORD
INTRODUCTION
1 Scope
2 Normative references
3 Terms and definitions
4 Thermal runaway test
5 Pass or fail criteria
6 Test report
Annex ZA (normative) - Normative references to
         international publications with their
         corresponding European publications

IEC 62979:2017(E) provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.

Committee
CLC/TC 82
DocumentType
Standard
PublisherName
European Committee for Standards - Electrical
Status
Current

Standards Relationship
NEN EN IEC 62979 : 2017 Identical
CEI EN 62979 : 1ED 2018 Identical
DIN EN 62979 : 2018-09 Identical
VDE 0126-45 : 2018-09 Identical
NF EN 62979:2017 Identical
IEC 62979:2017 Identical
UNE-EN 62979:2017 Identical
I.S. EN 62979:2017 Identical
OVE EN 62979:2018 11 01 Identical
BS EN 62979:2017 Identical

IEC TS 61836:2007 Solar photovoltaic energy systems - Terms, definitions and symbols

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