EN 62979:2017
Current
The latest, up-to-date edition.
Photovoltaic module - Bypass diode - Thermal runaway test
27-10-2017
FOREWORD
INTRODUCTION
1 Scope
2 Normative references
3 Terms and definitions
4 Thermal runaway test
5 Pass or fail criteria
6 Test report
Annex ZA (normative) - Normative references to
international publications with their
corresponding European publications
IEC 62979:2017(E) provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.
Committee |
CLC/TC 82
|
DocumentType |
Standard
|
PublisherName |
European Committee for Standards - Electrical
|
Status |
Current
|
Standards | Relationship |
NEN EN IEC 62979 : 2017 | Identical |
CEI EN 62979 : 1ED 2018 | Identical |
DIN EN 62979 : 2018-09 | Identical |
VDE 0126-45 : 2018-09 | Identical |
NF EN 62979:2017 | Identical |
IEC 62979:2017 | Identical |
UNE-EN 62979:2017 | Identical |
I.S. EN 62979:2017 | Identical |
OVE EN 62979:2018 11 01 | Identical |
BS EN 62979:2017 | Identical |
IEC TS 61836:2007 | Solar photovoltaic energy systems - Terms, definitions and symbols |
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