EN IEC 60749-17:2019
Current
The latest, up-to-date edition.
Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation
10-05-2019
The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test.The objectives of the test are as follows:a) to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, andb) to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 6).
| Committee |
CLC/TC 47X
|
| DocumentType |
Standard
|
| PublisherName |
European Committee for Standards - Electrical
|
| Status |
Current
|
| Supersedes |
| Standards | Relationship |
| IEC 60749-17:2019 | Identical |
| NEN-EN-IEC 60749-17:2019 | Identical |
| BS EN IEC 60749-17:2019 | Identical |
| I.S. EN IEC 60749-17:2019 | Identical |
| VDE 0884-749-17:2019-11 | Identical |
| CEI EN IEC 60749-17 : 2019 | Identical |
| CEI EN IEC 60749-17 : 2019 | Identical |
| DIN EN IEC 60749-17 : 2019-11 | Identical |
| PN-EN IEC 60749-17:2019-11 | Identical |
| UNE-EN IEC 60749-17:2019 | Identical |
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