I.S. EN 62373:2006
Current
The latest, up-to-date edition.
BIAS-TEMPERATURE STABILITY TEST FOR METAL-OXIDE, SEMICONDUCTOR, FIELD-EFFECT TRANSISTORS (MOSFET)
Hardcopy , PDF
English
01-01-2006
For Harmonized Standards, check the EU site to confirm that the Standard is cited in the Official Journal.
Only cited Standards give presumption of conformance to New Approach Directives/Regulations.
Dates of withdrawal of national standards are available from NSAI.
FOREWORD
INTRODUCTION
1 Scope
2 Terms and definitions
3 Test equipment
3.1 Equipment
3.2 Requirement for handling
4 Test sample
4.1 Sample
4.2 Packaging
4.3 ESD protection circuit
5 Procedure
5.1 Initial measurement and read point measurement
5.2 Test
5.3 Notes for field MOSFET
5.4 Judgment
Annex A (informative) Wafer level reliability test (WLR test)
Bibliography
Presents a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect transistors (MOSFET).
| DevelopmentNote |
For CENELEC adoptions of IEC publications, please check www.iec.ch to be sure that you have any corrigenda that may apply. (01/2017)
|
| DocumentType |
Standard
|
| Pages |
40
|
| PublisherName |
National Standards Authority of Ireland
|
| Status |
Current
|
| Standards | Relationship |
| BS EN 62373:2006 | Identical |
| NF EN 62373 : 2006 | Identical |
| NBN EN 62373 : 2007 | Identical |
| DIN EN 62373:2007-01 | Identical |
| EN 62373:2006 | Identical |
| IEC 62373:2006 | Identical |
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