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I.S. EN 62373:2006

Current

Current

The latest, up-to-date edition.

BIAS-TEMPERATURE STABILITY TEST FOR METAL-OXIDE, SEMICONDUCTOR, FIELD-EFFECT TRANSISTORS (MOSFET)

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

01-01-2006

For Harmonized Standards, check the EU site to confirm that the Standard is cited in the Official Journal.

Only cited Standards give presumption of conformance to New Approach Directives/Regulations.


Dates of withdrawal of national standards are available from NSAI.

FOREWORD
INTRODUCTION
1 Scope
2 Terms and definitions
3 Test equipment
  3.1 Equipment
  3.2 Requirement for handling
4 Test sample
  4.1 Sample
  4.2 Packaging
  4.3 ESD protection circuit
5 Procedure
  5.1 Initial measurement and read point measurement
  5.2 Test
  5.3 Notes for field MOSFET
  5.4 Judgment
Annex A (informative) Wafer level reliability test (WLR test)
Bibliography

Presents a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect transistors (MOSFET).

DevelopmentNote
For CENELEC adoptions of IEC publications, please check www.iec.ch to be sure that you have any corrigenda that may apply. (01/2017)
DocumentType
Standard
Pages
40
PublisherName
National Standards Authority of Ireland
Status
Current

Standards Relationship
BS EN 62373:2006 Identical
NF EN 62373 : 2006 Identical
NBN EN 62373 : 2007 Identical
DIN EN 62373:2007-01 Identical
EN 62373 : 2006 Identical
SN EN 62373 : 2006 Identical
IEC 62373:2006 Identical

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