I.S. EN 62416:2010
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICES - HOT CARRIER TEST ON MOS TRANSISTORS
Hardcopy , PDF
English
01-01-2010
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Only cited Standards give presumption of conformance to New Approach Directives/Regulations.
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FOREWORD
1 Scope
2 Abbreviations and letter symbols
3 Test structures
4 Stress time
5 Stress conditions
6 Sample size
7 Temperature
8 Failure criteria
9 Lifetime estimation method
10 Lifetime requirements
11 Reporting
Bibliography
Specifies the wafer level hot carrier test on NMOS and PMOS transistors. The test is intended to determine whether the single transistors in a certain (C)MOS process meet the required hot carrier lifetime.
| DevelopmentNote |
For CENELEC adoptions of IEC publications, please check www.iec.ch to be sure that you have any corrigenda that may apply. (01/2017)
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| DocumentType |
Standard
|
| Pages |
13
|
| PublisherName |
National Standards Authority of Ireland
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| Status |
Current
|
| Standards | Relationship |
| EN 62416 : 2010 | Identical |
| IEC 62416:2010 | Identical |
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