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I.S. EN 62416:2010

Current

Current

The latest, up-to-date edition.

SEMICONDUCTOR DEVICES - HOT CARRIER TEST ON MOS TRANSISTORS

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

01-01-2010

For Harmonized Standards, check the EU site to confirm that the Standard is cited in the Official Journal.

Only cited Standards give presumption of conformance to New Approach Directives/Regulations.


Dates of withdrawal of national standards are available from NSAI.

FOREWORD
1 Scope
2 Abbreviations and letter symbols
3 Test structures
4 Stress time
5 Stress conditions
6 Sample size
7 Temperature
8 Failure criteria
9 Lifetime estimation method
10 Lifetime requirements
11 Reporting
Bibliography

Specifies the wafer level hot carrier test on NMOS and PMOS transistors. The test is intended to determine whether the single transistors in a certain (C)MOS process meet the required hot carrier lifetime.

DevelopmentNote
For CENELEC adoptions of IEC publications, please check www.iec.ch to be sure that you have any corrigenda that may apply. (01/2017)
DocumentType
Standard
Pages
13
PublisherName
National Standards Authority of Ireland
Status
Current

Standards Relationship
EN 62416 : 2010 Identical
IEC 62416:2010 Identical

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