ISO 12406:2010
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The latest, up-to-date edition.
Surface chemical analysis Secondary-ion mass spectrometry Method for depth profiling of arsenic in silicon
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English
08-11-2010
ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.
DevelopmentNote |
Supersedes ISO/DIS 12406. (11/2010)
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DocumentType |
Standard
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Pages |
13
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PublisherName |
International Organization for Standardization
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Status |
Current
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Standards | Relationship |
BS ISO 12406:2010 | Identical |
NEN ISO 12406 : 2010 | Identical |
SAC GB/T 32495 : 2016 | Identical |
ISO 18114:2003 | Surface chemical analysis Secondary-ion mass spectrometry Determination of relative sensitivity factors from ion-implanted reference materials |
ISO 18115-1:2013 | Surface chemical analysis — Vocabulary — Part 1: General terms and terms used in spectroscopy |
ISO 14237:2010 | Surface chemical analysis Secondary-ion mass spectrometry Determination of boron atomic concentration in silicon using uniformly doped materials |
ISO 17560:2014 | Surface chemical analysis Secondary-ion mass spectrometry Method for depth profiling of boron in silicon |
ISO 5725-2:1994 | Accuracy (trueness and precision) of measurement methods and results Part 2: Basic method for the determination of repeatability and reproducibility of a standard measurement method |
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