ISO 17560:2002
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Surface chemical analysis Secondary-ion mass spectrometry Method for depth profiling of boron in silicon
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16-07-2021
English, French
18-07-2002
ISO 17560:2002 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal or amorphous-silicon specimens with boron atomic concentrations between 11016 atoms/cm3 and 11020 atoms/cm3, and to crater depths of 50 nm or deeper.
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