JIS H 0602:1995
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Testing method of resistivity for silicon crystals and silicon wafers with four-point probe
Published date
30-11-1995
Publisher
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This Japanese Industrial Standard specifies the testing methods of resistivity for silicon crystals (hereafter referred to as the \"crystals\") and silicon wafers (hereafter referred to as the \"wafers\") with dc four-point probe. The range of resistivity able to be measured shall be 0.001 to 2000 ohm cm for p-type and 0.001 to 6000 ohm cm for n-type.
| DocumentType |
Standard
|
| PublisherName |
Japanese Standards Association
|
| Status |
Current
|
| Supersedes |
| JIS R 6001:1998 | Bonded abrasive grain sizes |
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