MIL-M-38510-203 Revision E:2007
Current
The latest, up-to-date edition.
Microcircuits, Digital, 1024 Bit Schottky, Bipolar, Programmable Read-Only Memory (Prom), Monolithic Silicon
18-09-2007
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W), titanium tungsten (TiW), or zapped vertical emitter (ZVE) as the fusible link or programming element.
| DevelopmentNote |
Inactive for the new design. (01/2006) E NOTICE 1 - Notice of Validation but remains Inactive for New Design. (06/2012) New child NOT 2 2022 is now added
|
| DocumentType |
Standard
|
| Pages |
34
|
| ProductNote |
New child NOT 2 2022 is now added
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W), titanium tungsten (TiW), or zapped vertical emitter (ZVE) as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4).
| MIL-STD-883 Revision K:2016 | Microcircuits |
| MIL-PRF-38535 Revision K:2013 | Integrated Circuits (Microcircuits) Manufacturing, General Specification for |
| MIL-STD-1835 Revision D:2004 | Electronic Component Case Outlines |
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