MIL-M-38510-203 Revision E Notice 2 - Validation:2022
Current
The latest, up-to-date edition.
Microcircuits, Digital, 1024 Bit Schottky, Bipolar, Programmable Read-Only Memory (Prom), Monolithic Silicon
English
31-03-2022
This specification covers the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W), titanium tungsten (TiW), or zapped vertical emitter (ZVE) as the fusible link or programming element.
| DocumentType |
Notice
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| Pages |
1
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| PublisherName |
US Military Specs/Standards/Handbooks
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| Status |
Current
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This specification covers the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W), titanium tungsten (TiW), or zapped vertical emitter (ZVE) as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4).
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