MIL-M-38510-204 Revision F:2009
Current
The latest, up-to-date edition.
Microcircuit, Digital, 2048-Bit, Schottky, Bipolar, Programmable Read-Only Memory (PROM), Monolithic Silicon
21-09-2009
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1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W) or titanium tungsten (TiW) as the fusible link or programming element.
| DevelopmentNote |
Inactive for New Design. (11/2005) F NOTICE 1 - Notice of Validation but remains Inactive for New Design. (07/2014)
|
| DocumentType |
Standard
|
| Pages |
35
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W), titanium tungsten (TiW), or zapped vertical emitter (ZVE) as the fusible link or programming element. Two product assurance class and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4).
| MIL-STD-883 Revision K:2016 | TEST METHOD STANDARD - MICROCIRCUITS |
| MIL-PRF-38535 Revision K:2013 | Integrated Circuits (Microcircuits) Manufacturing, General Specification for |
| MIL-STD-1835 Revision D:2004 | ELECTRONIC COMPONENT CASE OUTLINES |
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