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MIL-M-38510-206 Revision D:2005

Current

Current

The latest, up-to-date edition.

Microcircuit, Digital, 4096 Bit Schottky, Bipolar, Programmable Read-Only Memory (PROM)

Available format(s)

PDF

Published date

25-04-2005

€17.95
Excluding VAT

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Describes the requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W) or titanium tungsten (TiW) as the fusible link or programming element.

DevelopmentNote
Inactive for New Design. (04/2005) D NOTICE 1 - Notice of Validation but remains Inactive for New Design. (02/2010) D NOTICE 2 - Notice of Validation but remains Inactive for New Design. (12/2014)
DocumentType
Standard
Pages
44
PublisherName
US Military Specs/Standards/Handbooks
Status
Current

This specification covers the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W) or titanium tungsten (TiW) as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. A special test requirement is included in this specification to screen against devices which may contain excess moisture in the package materials or internal atmosphere ( see freeze-out test of 4.2d). For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4).

MIL-STD-883 Revision K:2016 TEST METHOD STANDARD - MICROCIRCUITS
MIL-PRF-38535 Revision K:2013 Integrated Circuits (Microcircuits) Manufacturing, General Specification for
MIL-STD-1835 Revision D:2004 ELECTRONIC COMPONENT CASE OUTLINES

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