MIL-M-38510-207 Revision E Notice 2 - Validation:2022
Current
The latest, up-to-date edition.
Microcircuit, Digital, 256-Bit, Schottky, Bipolar, Programmable Read-Only Memory (PROM), Monolithic Silicon
English
20-05-2022
This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W), titanium tungsten (TiW), or zapped vertical emitter (ZVE) as the fusible link or programming element.
| DocumentType |
Notice
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| Pages |
1
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| PublisherName |
US Military Specs/Standards/Handbooks
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| Status |
Current
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This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W), titanium tungsten (TiW), or zapped vertical emitter (ZVE) as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead material and finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4).
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