MIL-M-38510-208 Revision F:2013
Current
The latest, up-to-date edition.
Microcircuit, Digital, 4096-Bit Schottky, Bipolar, Programmable Read-Only Memory (PROM), Monolithic Silicon
English
21-08-2013
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Provides the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, titanium-tungsten (TiW), or zapped vertical emitter (ZVE) as the fusible link or programming element.
DevelopmentNote |
Inactive for New Design. (02/2006)
|
DocumentType |
Standard
|
Pages |
55
|
PublisherName |
US Military Specs/Standards/Handbooks
|
Status |
Current
|
This specification covers the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, titanium-tungsten (TiW), or zapped vertical emitter (ZVE) as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4).
MIL-STD-883 Revision K:2016 | TEST METHOD STANDARD - MICROCIRCUITS |
MIL-PRF-38535 Revision K:2013 | Integrated Circuits (Microcircuits) Manufacturing, General Specification for |
MIL-STD-1835 Revision D:2004 | ELECTRONIC COMPONENT CASE OUTLINES |
Access your standards online with a subscription
Features
-
Simple online access to standards, technical information and regulations.
-
Critical updates of standards and customisable alerts and notifications.
-
Multi-user online standards collection: secure, flexible and cost effective.