MIL-M-38510-209 Revision H:2014
Current
The latest, up-to-date edition.
Microcircuit, Digital, 8192-Bit, Schottky, Bipolar, Programmable Read-Only Memory (PROM), Monolithic Silicon
English
21-04-2014
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1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome (NiCr) resistors, zapped vertical emitter, tungsten (W), titanium tungsten (TiW), or platinum silicide as the fusible link or programming element.
| DevelopmentNote |
Inactive for New Design. (02/2006)
|
| DocumentType |
Standard
|
| Pages |
68
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome (NiCr) resistors, zapped vertical emitter, tungsten (W), titanium tungsten (TiW), or platinum silicide as the fusible link or programming element. Two product assurance class and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4).
| MIL-STD-883 Revision K:2016 | TEST METHOD STANDARD - MICROCIRCUITS |
| MIL-PRF-38535 Revision K:2013 | Integrated Circuits (Microcircuits) Manufacturing, General Specification for |
| MIL-STD-1835 Revision D:2004 | ELECTRONIC COMPONENT CASE OUTLINES |
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