MIL-M-38510-210 Revision F:2013
Current
The latest, up-to-date edition.
Microcircuit, Digital, 16,384 Bit Schottky, Bipolar, Programmable Read-Only Memory (PROM) Monolithic Silicon
English
19-06-2013
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, platinum-silicide, tungsten (W), titanium-tungsten (TiW) or zapped vertical emitter as the fusible link or programming element.
DevelopmentNote |
Inactive for the new design. (03/2006)
|
DocumentType |
Standard
|
Pages |
61
|
PublisherName |
US Military Specs/Standards/Handbooks
|
Status |
Current
|
This specification covers the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, platinum-silicide, tungsten (W), titanium-tungsten (TiW) or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4).
MIL-STD-883 Revision K:2016 | TEST METHOD STANDARD - MICROCIRCUITS |
MIL-PRF-38535 Revision K:2013 | Integrated Circuits (Microcircuits) Manufacturing, General Specification for |
MIL-STD-1835 Revision D:2004 | ELECTRONIC COMPONENT CASE OUTLINES |
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